Overview
Established in 2004, IceMOS Technology focuses on providing cost-effective, high-performance Super Junction MOSFETs, MEMS solutions, and Advanced Engineering Substrates.
Our sensing and power technologies support decarbonization with energy-efficient and CO2-saving solutions for applications such as:
• Artificial Intelligence
• Assisted & Autonomous Driving
• Data center cloud and edge computing power supplies
• Rapid chargers for electric vehicles
• Low Earth orbit satellite and deep space exploration
Our technology roadmap introduces a new class of semiconductors essential for the efficiency demands of the digital economy market.
High Voltage Superjunction MOSFET:
IceMOS MEMS MOSFET, utilizing Superjunction Technology, combines Silicon MOSFET and MEMS process technologies to deliver world-class performance. This synergy encourages extreme MOSFET performance advancements.
Advanced Engineering Substrates for MEMS and Optoelectronics (PVG):
IceMOS offers dielectric isolation technology for high voltage isolation on the same chip, using thick film SOI technology with high aspect ratio deep trench etching and oxide/poly refill. Available in wafer sizes from 100mm to 150mm and silicon device layers from 1.5um to 100um.
SOI, SiSi Direct Bonded Wafers, and Cavity Bonded SOI for MEMS Sensors:
IceMOS supplies 100-150mm thick-film SOI, SiSi, and Cavity Bonded SOI engineered substrates for various IC and MEMS Sensor applications. With over 20 years of SOI manufacturing experience, we offer one of the widest specification ranges in the market.
IceMOS Technology 成立於2004年,致力於成為生產高性能且具成本效益的超結(超結合面)MOSFET、 微機電系統(MEMS)解決方案及先進工程基板的一流供應商。
我們的感測及電力技術正在推動更節能及減少二氧化碳排放的脫碳解決方案。
應用範圍包括:
• 人工智慧
• 輔助及自動駕駛
• 數據中心雲端及邊緣運算電源供應
• 電動車快速充電器
• 低軌道衛星及深空探測
高壓超結MOSFET:
IceMOS 的高壓MEMS MOSFET 採用「超結技術」。我們透過將MOSFET技術與 MEMS製程技術結合,提供世界一流的性能。MEMS技術是因應特殊製程開發的,而MOSFET技術則持續朝向縮小製程的方向進步。結合了以上兩種技術,IceMOS顯著提升了MOSFET的性能。
適用於MEMS和光電工程(PVG)的先進工程基板:
IceMOS Technology 使用電介質隔離技術,以隔離同一晶片上的高壓半導體元件。此隔離技術結合了厚膜SOI技術與先進的高深寬比深槽蝕刻及氧化物/聚合物填充技術來達到隔離效果。我們的技術可應用於任何尺存100mm到150mm的晶圓,以及厚度從1.5um到100um矽器件層。
適用於MEMS感測器的SOI、SiSi直接鍵合晶圓及腔體鍵合SOI:
IceMOS Technology 是100-150mm厚膜SOI、SiSi和腔體鍵合 SOI工程基板的領先供應商,應用範圍涵蓋大量的IC及MEMS感測器。憑藉超過20年的SOI製造經驗,我們提供市場上最廣泛的產品規格範圍。