Overview
ULTRARAM™ from Quinas Technology is an advanced memory technology developed by Lancaster University, designed to be a universal memory solution. It employs resonant tunnelling, a quantum-mechanical process, to achieve non-volatility with fast and energy-efficient write and erase operations, offering high endurance.
ULTRARAM™ combines the best of both DRAM and NAND flash; it’s as fast as DRAM but non-volatile like NAND flash, with high endurance and ultra-low switching energies.
ULTRARAM™ uses III-V compound semiconductors, enabling it to harness unique electrical properties while allowing for volume production using existing semiconductor manufacturing processes. Specifically, it employs a unique triple-barrier resonant-tunnelling (TBRT) structure made from InAs/AlSb compound semiconductors. This structure replaces the traditional resistive oxide barrier of flash with atomically thin layers that switch between a highly-resistive state when unpowered and a highly-conductive state when a small voltage is applied, allowing for efficient program/erase operations. This innovation gives ULTRARAM™ its unique combination of high performance, non-volatility, and endurance.
ULTRARAM™ is seeking to exploit its technology in the key areas of challenging environments, cryptocurrency, IoT, in memory computing.
Seeking partners to accelerate and expedite:
• Device Pathfinding
• Array development
• Integration with CMOS
• Process development
• Logic integration
• Measurements
• Packaging
• Testing
• Heterogeneous integration / Chiplets
• Consumer and enterprise
Quinas Technology公司的ULTRARAM™，是由英國蘭卡斯特大學開發的先進記憶體技術，旨在成為通用型記憶體解決方案。該技術利用共振穿隧效應，透過快速且節能的寫入和抹除運作，實現非揮發性，因此具備高耐用性。
ULTRARAM™結合DRAM與NAND快閃的優點，速度像DRAM一樣快，但和快閃記憶體同樣具備非揮發性、高耐用性和超低功耗的特性。
ULTRARAM™使用三五族化合物半導體，能充分利用記憶體的獨特電氣特性，同時還可利用既有半導體製程進行大量生產。具體來說，它採用以砷化銦 （InAs）／銻化鋁（AlSb）化合物半導體製成的獨特三重勢壘共振穿隧(TBRT)結構，以原子級薄層取代快閃記憶體的傳統電阻氧化物勢壘（resistive oxide barrier），可在斷電時的高阻狀態和施加小電壓時的高導通狀態之間切換，進而實現高效的程式設計／抹除運作。此創新讓ULTRARAM™擁有高性能、非揮發性和耐用性的獨一無二特性組合。 ULTRARAM™正尋求在充滿挑戰的環境、加密貨幣、物聯網（IoT）、記憶體運算等關鍵領域，發揮其技術優勢。
徵求具備下列領域專業知識、以加速合作進展的研發和產業夥伴：
• 裝置開發路徑探詢（Pathfinding）
• 陣列開發
• 與互補式金屬氧化物半導體（CMOS）的整合
• 製程開發
• 邏輯電路整合
• 量測
• 封裝
• 測試
• 異質整合／小晶片（chiplets）
• 消費者和企業