Systems Engineering Inc.

【Applilcation】

・Epitaxial Thickness

   Thickness Range : 0.3-750 μm

   Precision : ±0.01 μm

・SiC Thickness

   Thickness Range : 0.3-750 μm

   Precision at 0.5-25 μm thickness sample: ≦ ±0.02

・Carbon & Oxygen in silicon

   Range(Cs) : 0.1-10 ppmA

   Range(Oi) : 0.3-35 ppmA

   Precision(Cs) : STD 0.05 ppmA

   Precision(Oi) : STD 0.08 ppmA

・Boron & Phosphrus in BPSG

   Range(B) : 1-10 Wt%

   Range(P) : 2-12 Wt%

   Range(B/P) : ±0.05 Wt%

・Hydrogen(Si-H/N-H) in Silicon Nitride

   Range : 3-30 Atom%

   Precision : ±0.3 Atom%

・Fluorine in SiO2 Films

   Range of thickness : 3000-10000Å

   Precision : STD<0.2 Fwt%

・Carbon doped Films

   Silicon Nitride

   Silicon Oxide

【Applilcation】
・Epitaxial Thickness

   Thickness Range : 0.3-750 μm

   Precision : ±0.01 μm

・SiC Thickness

   Thickness Range : 0.3-750 μm

   Precision at 0.5-25 μm thickness sample: ≦ ±0.02

・Carbon & Oxygen in silicon

   Range(Cs) : 0.1-10 ppmA

   Range(Oi) : 0.3-35 ppmA

   Precision(Cs) : STD 0.05 ppmA

   Precision(Oi) : STD 0.08 ppmA

・Boron & Phosphrus in BPSG

   Range(B) : 1-10 Wt%

   Range(P) : 2-12 Wt%

   Range(B/P) : ±0.05 Wt%

・Hydrogen(Si-H/N-H) in Silicon Nitride

   Range : 3-30 Atom%

   Precision : ±0.3 Atom%

・Fluorine in SiO2 Films

   Range of thickness : 3000-10000Å

   Precision : STD<0.2 Fwt%

・Carbon doped Films

   Silicon Nitride

   Silicon Oxide

【Applilcation】
・EPI Thickness measurement

　Thickness Range: 0.3-750 μm

　Precision: ±0.01 μm

・SiC Thickness

   Thickness Range : 0.3-750 μm

   Precision at 0.5-25 μm thickness sample: ≦ ±0.02

・Carbon & Oxygen in Silicon measurement

　Range(Cs): 0.1-10 ppmA

　Range(Oi): 0.3-35 ppmA

　Precision(Cs): STD 0.05 ppmA

　Precision(Oi): STD 0.08 ppmA

・Boron & Phosphorus in BPSG Films measurement

　Range(B): 1-10 Wt%

　Range(P): 2-12 Wt%

　Precision(B/P): ±0.05 Wt%

・Hydrogen in Silicon Nitride Films measurement

　Range: 3-30 Atom%

　Precision: ±0.3 Atom%

・Fluorine in SiO2 Films measurement

　Thickness: 3000-10000Å

　Precision: STD<0.2 Fwt%

・Carbon-doped Films evaluation

　Silicon Nitride

　Silicon Oxid

【Application】
・Oxygen in ingot

   Range : 0.3-35 ppmA

   Precision : STD 0.08 ppmA

【Applilcation】
・Epitaxial Thickness

   Thickness Range : 0.3-750 μm

   Precision : ±0.01 μm

・SiC Thickness

   Thickness Range : 0.3-750 μm

   Precision at 0.5-25 μm thickness sample: ≦ ±0.02

・Carbon & Oxygen in silicon

   Range(Cs) : 0.1-10 ppmA

   Range(Oi) : 0.3-35 ppmA

   Precision(Cs) : STD 0.05 ppmA

   Precision(Oi) : STD 0.08 ppmA

・Boron & Phosphrus in BPSG

   Range(B) : 1-10 Wt%

   Range(P) : 2-12 Wt%

   Range(B/P) : ±0.05 Wt%

・Hydrogen(Si-H/N-H) in Silicon Nitride

   Range : 3-30 Atom%

   Precision : ±0.3 Atom%

・Fluorine in SiO2 Films

   Range of thickness : 3000-10000Å

   Precision : STD<0.2 Fwt%

・Carbon doped Films

   Silicon Nitride

   Silicon Oxide