Systems Engineering Inc.

Bunkyo-ku Tokyo,  Japan
https://www.systems-eng.co.jp/products/semi_ftir_products.html
  • Booth: S7541

To challenge spectral analysis!!

Overview

Support the semiconductor industry with optical measurement.

Systems Engineering manufactures a new generation "FT-IR SE 50 series" semiconductor material characterization tools equipped with Thermo Fisher Scientific's research grade FTIR and JEL's self-transport system.

"FT-IR SE-50 series" focuses purging performance and measurement efficiency with N2, and it makes the industry's highest level of high-precision measurement.

We have wide variety of applications to suit customers needs in "SE-50 series".

【Wafer measurement】

・EPI Thickness

・SiC Thickness

・SOI Thickness

・Carbon & Oxygen in Silicon

・Boron & Phosphorus in BPSG Films

・Hydrogen in Silicon Nitride Films

・Fluorine in SiO2 Films

・Thickness of non-diffusion layer film

【Ingot measurement】

・Oxygen concentration

Systems Engineering introduce the feature of SE-50 series in our booth(No.S7541).

Please feel free to take an opportunity to visit us!!

  Products

  • SE50A-ECO 200DSMIF
    ・Compatible with 8-inch wafers
    ・Double SMIF
    ・Vacuum suction type robot transfer system
    ・OHT/AGV available
    ・Intuitive Graphical User Interface...

    • SE50A-ECO 200DSMIF

    ・Compatible with 8-inch wafers
    ・Double SMIF
    ・Vacuum suction type robot transfer system
    ・OHT/AGV available
    ・Intuitive Graphical User Interface

    【Applilcation】

    ・Epitaxial Thickness
       Thickness Range : 0.3-750 μm
       Precision : ±0.01 μm

    ・SiC Thickness
       Thickness Range : 0.3-750 μm
       Precision at 0.5-25 μm thickness sample: ≦ ±0.02

    ・Carbon & Oxygen in silicon
       Range(Cs) : 0.1-10 ppmA
       Range(Oi) : 0.3-35 ppmA
       Precision(Cs) : STD 0.05 ppmA
       Precision(Oi) : STD 0.08 ppmA

    ・Boron & Phosphrus in BPSG
       Range(B) : 1-10 Wt%
       Range(P) : 2-12 Wt%
       Range(B/P) : ±0.05 Wt%

    ・Hydrogen(Si-H/N-H) in Silicon Nitride
       Range : 3-30 Atom%
       Precision : ±0.3 Atom%

    ・Fluorine in SiO2 Films
       Range of thickness : 3000-10000Å
       Precision : STD<0.2 Fwt%

    ・Carbon doped Films
       Silicon Nitride
       Silicon Oxide

  • SE50A-ECO 200SS
    ・Compatible with 4-8 inches wafers
    ・Single cassette
    ・Vacuum suction type robot transfer system
    ・Intuitive Graphical User Interface
    ・Space saving model...

    • SE50A-ECO 200SS
    ・Compatible with 4-8 inches wafers
    ・Single cassette
    ・Vacuum suction type robot transfer system
    ・Intuitive Graphical User Interface
    ・Space saving model
    【Applilcation】
    ・Epitaxial Thickness
       Thickness Range : 0.3-750 μm
       Precision : ±0.01 μm
    ・SiC Thickness
       Thickness Range : 0.3-750 μm
       Precision at 0.5-25 μm thickness sample: ≦ ±0.02
    ・Carbon & Oxygen in silicon
       Range(Cs) : 0.1-10 ppmA
       Range(Oi) : 0.3-35 ppmA
       Precision(Cs) : STD 0.05 ppmA
       Precision(Oi) : STD 0.08 ppmA
    ・Boron & Phosphrus in BPSG
       Range(B) : 1-10 Wt%
       Range(P) : 2-12 Wt%
       Range(B/P) : ±0.05 Wt%
    ・Hydrogen(Si-H/N-H) in Silicon Nitride
       Range : 3-30 Atom%
       Precision : ±0.3 Atom%
    ・Fluorine in SiO2 Films
       Range of thickness : 3000-10000Å
       Precision : STD<0.2 Fwt%
    ・Carbon doped Films
       Silicon Nitride
       Silicon Oxide
  • SE50A-ECO 300SF
    ・8-12 inches wafer measurement
    ・Single FOUP
    ・Vacuum suction type robot transfer system
    ・Compatible with OHT/AGV
    ・Intuitive software control
    ・Safety standard compliant model(SEMI-S2、CE marking)...

    • SE50A-ECO 300SF

    ・8-12 inches wafer measurement
    ・Single FOUP
    ・Vacuum suction type robot transfer system
    ・Compatible with OHT/AGV
    ・Intuitive software control
    ・Safety standard compliant model(SEMI-S2、CE marking)

    【Applilcation】
    ・EPI Thickness measurement
    Thickness Range: 0.3-750 μm
    Precision: ±0.01 μm

    ・SiC Thickness
       Thickness Range : 0.3-750 μm
       Precision at 0.5-25 μm thickness sample: ≦ ±0.02

    ・Carbon & Oxygen in Silicon measurement
    Range(Cs): 0.1-10 ppmA
    Range(Oi): 0.3-35 ppmA
    Precision(Cs): STD 0.05 ppmA
    Precision(Oi): STD 0.08 ppmA

    ・Boron & Phosphorus in BPSG Films measurement
    Range(B): 1-10 Wt%
    Range(P): 2-12 Wt%
    Precision(B/P): ±0.05 Wt%

    ・Hydrogen in Silicon Nitride Films measurement
    Range: 3-30 Atom%
    Precision: ±0.3 Atom%

    ・Fluorine in SiO2 Films measurement
    Thickness: 3000-10000Å
    Precision: STD<0.2 Fwt%

    ・Carbon-doped Films evaluation
    Silicon Nitride
    Silicon Oxide

  • SE50-OIP
    ・Compatible with φ200mm/300mm ingot
    ・Ingot length up to 3000mm
    ・Automatic multipoint measurement
    ・Intuitive Graphical User Interface...

    • SE50-OIP

    ・Compatible with φ200mm/300mm ingot
    ・Ingot length up to 3000mm
    ・Automatic multipoint measurement
    ・Intuitive Graphical User Interface

    【Application】
    ・Oxygen in ingot
       Range : 0.3-35 ppmA
       Precision : STD 0.08 ppmA

  • SE50S-ECO
    ・Compatible with 2-8 inches or 6-12 inches wafers
    ・Stage Type
    ・Automatic multipoint measurement system in wafers
    ・Intuitive Graphical User Interface...

    • SE50S-ECO

    ・Compatible with 2-8 inches or 6-12 inches wafers
    ・Stage Type
    ・Automatic multipoint measurement system in wafers
    ・Intuitive Graphical User Interface

    【Applilcation】
    ・Epitaxial Thickness
       Thickness Range : 0.3-750 μm
       Precision : ±0.01 μm

    ・SiC Thickness
       Thickness Range : 0.3-750 μm
       Precision at 0.5-25 μm thickness sample: ≦ ±0.02

    ・Carbon & Oxygen in silicon
       Range(Cs) : 0.1-10 ppmA
       Range(Oi) : 0.3-35 ppmA
       Precision(Cs) : STD 0.05 ppmA
       Precision(Oi) : STD 0.08 ppmA

    ・Boron & Phosphrus in BPSG
       Range(B) : 1-10 Wt%
       Range(P) : 2-12 Wt%
       Range(B/P) : ±0.05 Wt%

    ・Hydrogen(Si-H/N-H) in Silicon Nitride
       Range : 3-30 Atom%
       Precision : ±0.3 Atom%

    ・Fluorine in SiO2 Films
       Range of thickness : 3000-10000Å
       Precision : STD<0.2 Fwt%

    ・Carbon doped Films
       Silicon Nitride
       Silicon Oxide

Categories

203 Equipment, Inspection & Measurement
  • Film Thickness; Thickness; Uniformity Measurement; Ellipsometer
  • Spectrometers; Fourier Transform Infrared (FTIR); Attenuated Total Reflectance FTIR (ATR-FTIR); Auge
  • Wafer; Substrate Metrology; Topology; Nanotopography; Flatness Measurement; Crystalline Orientation
  • X-ray; XRF; 3-D X-Ray; LEXES Systems
    • 307 Materials, Process
  • Ingots

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