Zhejiang Hangke Instrument Co., Ltd.

Hangzhou,  Zhejiang Province 
China
https://www.hkyq.com.cn/
  • Booth: T9210

Leading company focuses on semiconductor reliability testing

Overview

Zhejiang Hangke Instrument Co., Ltd. is a high-end equipment manufacturing company with a long history and rich technological heritage, headquartered in Hangzhou, China. The company focuses on semiconductor reliability test and special power supply fields, and is a professional testing solution provider, efficient testing system service provider, and leading electronic power equipment developer. After decades of innovation accumulation, it now has burn-in screening equipment and testing systems covering the entire series of electronic components.
The company currently has over 300 employees, with more than 50% being professional technical personnel, 70 patents in reserve. Its mature sales system and excellent after-sales team can quickly respond to client needs, and its products and services have reached all over the world, receiving long-term recognition from numerous clients.

  Products

  • Wafer-level reliability test system
    The system is suitable for electrical reliability test for controllable high temperature for 6/8-inch wafer-level devices based on JEDEC reliability test standard;...

    • The system is suitable for electrical reliability test for controllable high temperature for 6/8-inch wafer-level devices based on JEDEC reliability test standard; It provides high-precision and high voltage output, and saves records high-precision current, controllable temperature and other parameters, and according to the recorded test data, export experiment tables and MAP diagrams in multiple formats.
  • Large scale integrated circuit burn-in test system
    The system can perform HTOL test on the chip at RT~+150°C. The output signal of the component is monitored in real time and the vector is automatically compared during the burn-in process....

    • The system can perform HTOL test on the chip at RT~+150°C. The output signal of the component is monitored in real time and the vector is automatically compared during the burn-in process.
  • Large scale integrated circuit burn-in test system
    The system supports dual temperature zones, and can carry out HTOL burn-in test at RT~+150°C, and detect the output signal of the device in real time during the burn-in process, in which the vectors are automatically compared....

    • The system supports dual temperature zones, and can carry out HTOL burn-in test at RT~+150°C, and detect the output signal of the device in real time during the burn-in process, in which the vectors are automatically compared.
  • IGBT power cycle test system
    The system is suitable for power cycling test of various sizes of IGBT modules and uses the advanced JEDEC static test method (JESD51-1) to generate temperature changes by varying the input power of the electronic component....

    • The system is suitable for power cycling test of various sizes of IGBT modules and uses the advanced JEDEC static test method (JESD51-1) to generate temperature changes by varying the input power of the electronic component. During the change, through transient temperature response curve of the tested chip and data processing of the test waveformto obtain the full thermal characteristics of the electronic component.
  • Dynamic HTRB2000
    The system performs dynamic high temperature reverse bias burn-in test for SiC MOS transistor with reference to AQG324 test method....

    • The system performs dynamic high temperature reverse bias burn-in test for SiC MOS transistor with reference to AQG324 test method. Up to 12 stations can be tested in each test area, with independent pulse source configurations. RT~200°C test temperature is available for the device. It has the function of short-circuit disengagement test of test device, which can automatically detach the faulty device from the burn-in test without affecting the normal test of other devices.
  • Dynamic HTGB2010
    The system performs dynamic high temperature gate bias burn-in test capabilities for the third-generation SiC MOS transistor, and each test area can independently burn up to 12 work stations....

    • The system performs dynamic high temperature gate bias burn-in test capabilities for the third-generation SiC MOS transistor, and each test area can independently burn up to 12 work stations. independently 12 configurable pulses, and the leakage current of the test gate does not interfere with each other. The device is available at RT ~ 200°C. It has the function of short-circuit disengagement test of test device, which can automatically detach the faulty device from the burn-in test without affecting the normal test of other devices.

Categories

208 Equipment, Test
  • Burn-In Accessory Systems
  • Burn-In Systems

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