🔷 Key Product Advantages
1. Silicon Carbide Homoepitaxy Technology
Through precise epitaxial growth on high-quality SiC substrates, an epitaxial layer with controlled thickness and doping concentration is formed. This process effectively reduces the impact of substrate defects, significantly improving device breakdown voltage and switching performance—an essential foundation for high-voltage and high-frequency power devices.
2. Multi-Size Wafer Supply Capability
The product portfolio covers mainstream wafer sizes, including 3-inch, 4-inch, 6-inch, and advanced 8-inch epitaxial wafers. It supports diverse process platforms and manufacturing requirements. Mass production of 8-inch wafers has been achieved, enabling scalability and cost optimization.
3. High Uniformity and Stability
Advanced process control and rigorous quality management systems ensure excellent uniformity and consistency across batches, supporting high-yield and reliable wafer fabrication processes.
🔷 Applications
Widely applied across fast-growing industries, including:
- Electric vehicle (EV) power control systems
- EV charging infrastructure
- Photovoltaic inverters and energy storage systems
- Railway traction systems
- Smart grids and power conversion equipment
- Industrial high-efficiency power supplies
🔷 Quality & Certification
Manufactured under strict quality control systems and compliant with international automotive and industrial standards (such as IATF 16949), the product meets demanding requirements for reliability and long-term performance. It is widely adopted by leading global power semiconductor companies.