San Francisco – July 3, 2018 – At Semicon West, Sino Nitride Semiconductor announces availability of 2 inch FS GaN for power devices manufacturers, 5G HEMT chip makers, and Micro LED foundry houses to immediately sample and test the new substrates.
Positive Customer Impact
Many customers have already benefited from GaN based compound semiconductors. GaN substrate with extra low dislocation density is paramount. Professor Ray-Ming Lin, a renowned researcher at Chang Gung University in Taiwan, has been the champion in GaN based solid state laser, high voltage Schottky diodes, and very high frequency RF components. “I am very excited to report that devices based on Sino Nitride’s 2 inch GaN substrates yield with much better performance,” said Prof. Lin, “We saw the higher efficacy and frequency gain in both the laser and HEMT devices, which was the main reason of establishing long term collaboration with Sino Nitride Semiconductor.”
2" FS GaN availability
“Our annual production of 30,000 picese of 2" FS GaN is the commitment to our customers.”, said Ming Sun, General Manager at Sino Nitride Semiconductor Co.,“By using our vertical HVPE systems, our high quality 2" FS GaN substrate exceeds the most stringent specifications while the cost is far less than the competitors’.”
Founded in 2009, Sino Nitride Semiconductor Co.(SNS) is a world class manufacturer in GaN materials for compound semiconductors and solid state lighting. SNS offers a wide range of products and services designed to fuel the growth of the future power devices, the advanced 5/6G communications, and the emerging Micro LED display.
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For more information on 2" GaN on sapphire: www.sinonitride.com