Oxford Instruments Plasma Technology (OIPT) has today launched a revolutionary plasma Atomic Layer Deposition (ALD) high volume manufacturing (HVM) solution delivering a step change needed to address fundamental challenges in the GaN power device industry. Gallium nitride devices are enabling the next generation of efficient power electronic devices for applications such as compact consumer power supplies, 5G networks, electric vehicles and renewable energy conversion.
GaN devices are more efficient and higher performance than current technologies, however there are manufacturing yield and scalability challenges. These need to be addressed to deliver reliable devices at a competitive cost. One of the key challenges is a consistently high-quality gate passivation, Atomfab delivers this solution with high throughput and low Cost of Ownership (CoO).
• Performance: Excellent passivation and dielectric properties enable the demanding device performance critical for key applications.
• Plasma: Remote plasma delivers a reproducible GaN interface. Atomfab precisely controls the plasma to protect the underlying sensitive GaN substrate.
• Pace: High throughput delivered by a high deposition rate process on a high uptime HVM platform specifically developed for GaN power applications.
The significantly reduced cost per wafer that Atomfab delivers is enabled by numerous technical innovations including a patent pending revolutionary fast remote plasma source.
Atomfab fulfils the customer needs on a single wafer platform with SEMI standard cluster configurations
and improved process controls for the latest compound semiconductor solutions.
“Atomfab provides many key benefits to our GaN device manufacturing customers including significant CoO
reduction, increased yield and excellent film quality & device performance. For many years Oxford
Instruments Plasma Technology has been known as the go to supplier for compound semiconductor
plasma solutions. We’ve leveraged that knowledge onto a HVM platform to ensure optimum devices are
produced all day, every day”, says Klaas Wisniewski, Strategic Business Development Director, OIPT.
Mike Gansser-Potts, Managing Director, OIPT states: “We’ve been highly commended for our unique
plasma ALD solutions and have listened to our HVM customers to take these solutions to the next level. We
are happy to announce that Atomfab provides these HVM solutions to our customers”.
For more information on Atomfab please visit Plasma.oxinst.com/Atomfab
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Issued for and on behalf of Oxford Instruments Plasma Technology
For further information and electronic copies of the images please contact:
Claire Critchell, Marketing Communications Manager
Oxford Instruments Plasma Technology
Email: Claire.critchell@oxinst.com | Tel: +44 (0)1934 837053
About Oxford Instruments plc
Oxford Instruments designs, supplies and supports high-technology tools and systems with a focus on research and industrial applications. Innovation has been the driving force behind Oxford Instruments' growth and success for over 50 years, and its strategy is to effect the successful commercialisation of these ideas by bringing them to market in a timely and customer-focused fashion. The first technology business to be spun out from Oxford University, Oxford Instruments is now a global company and is listed on the London Stock Exchange (OXIG). Its objective is to be the leading provider of new generation tools and systems for the research and industrial sectors with a focus on nanotechnology. Its key market sectors include nano-fabrication and nano-materials. The company’s strategy is to expand the business into the life sciences arena, where nanotechnology and biotechnology intersect
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About Oxford Instruments Plasma Technology
Oxford Instruments Plasma Technology offers flexible, configurable process tools and leading-edge processes for the precise, controllable and repeatable engineering of micro- and nano-structures. Our systems provide process solutions for the etching of nanometre sized features, nanolayer deposition and the controlled growth of nanostructures.