TIMARIS - Vacuum Nano Depostion Platform for Semiconductor & Magnetic Storage
SINGULUSTechnologies has already established and qualified the second generation of the TIMARIS PVD Cluster Tool platform in the market and is offering a complete portfolio of process modules for different applications.
- Sensors (GMR, TMR, other)
- Ferro magnetics
- In-circuit Inductors
- Ultra thin-film deposition
Thin-Film Heads (TFH)
- Magnetic high moment films
- TMR (reader material)
- GMR (reader material)
- Deposition of seed and gap layers
As of today, more than ten process modules are available to configure a TIMARIS system according to customer needs. These modules include the Multi-Target-Module (MTM), Oxidation-Process-Module (OPM), Pre-Clean- Module (PCM), Combi-Process-Module (CPM), Four-Target-Module (FTM) and Static-Deposition- Module (SDM) as well as the Rotating-Substrate- Module (RSM). The RSM is the core module of the ROTARIS platform, our sputtering system for special R&D applications.
The TIMARIS PVD modules (MTM, FTM, SDM and RSM) incorporate the full scope of sputtering techniques as: DC magnetron sputtering, pulsed DC magnetron sputtering and RF magnetron sputtering as well as combinations of these modes are selectable by recipe.
All TIMARIS applications require the deposition of ultra-thin metallic and insulating films and film stacks down to a thickness of one nanometer and below with very precise material thickness and high uniformity specifications.
The MTM and the FTM are the key components of the TIMARIS platform; the MTM incorporates the Linear Dynamic Deposition (LDD, US patent US 7,799,179 B2) technology in combination with ten sputter targets in one vacuum chamber.
The FTM module uses Linear Dynamic Deposition in combination with up to four cathodes. The LDD technology is especially designed for deposition of ultra-thin films, magnetic films, high-quality metallic, conductive and insulating films and is the key to deliver world class material uniformity across large wafer sizes, combined with an exceptional precise control of ultra-thin layer thickness down to 1 % of a nanometer.