KBTEM-OMO

2-31 ALK Bldg, 2 Partizansky Avenue
Minsk,  220033

Belarus
http://www.planar.by
  • Booth: 256


Planar: Bringing Traditions Into The Future!

Planar (Belarus) is:

  • 60 years in microelectronics engineering
  • High level vertical integration in design and manufacturing
  • Field proven tools for 1 µm, 0.6 µm, 0.35 µm, 0.13 µm and 90 nm technology node
  • Total solution provider for defect free mask manufacturing
  • Maskless lithography solution
  • Variety of wafer inspection systems
  • Unique solution for double-side lithography
  • Brand new tools only, no secondhand or refurbished tools

Planar performs scientific and technical development and production of special opto-mechanical process equipment as well as inspection and measurement equipment used in microelectronics products manufacture:

  • laser pattern generators for mask and wafer patterning;
  • wafer steppers;
  • large-field steppers;
  • mask aligners;
  • laser-based mask repair systems;
  • automatic mask inspection systems with high detection threshold,
  • wafer inspection tools for macro and micro defect inspection


 Products

  • EM-5171 Laser-based Mask Defect Repair System
    Main features: • transparent defect repair; • opaque defect repair; • TV monitoring over orientation, alignment and aiming; • semiautomatic mask loading/unloading mode. ...

  • EM-5171 Specifications

    Minimal trench width, um:

    - transparent

    - opaque            

    0.8

    0.3

    Working field size, mm

    160х160

    Angular position of an area under repair, degrees

    ±45

    Presetting increment of repairable opaque coating area, not more than, um

    0.05

    Power consumption, not more than, kW

    4

  • EM-6729B, -0.25 Mask Pattern Inspection System
    EM-6729 series: automatic inspection of photomasks with transparent and opaque defects. Die-to-database comparison method. Defect list generation after inspection cycle. Defect displaying. ...

  • EM-6729B

    EM-6729-0.25

    Minimum detected defect size, μm

    0.15

    0.25

    Inspection time of 100х100mm area, min

    30

    25

    Working field size, mm

    153x153

    Reference image feature size correction range, nm

    50 ... 250

    Defect programmed filtering range, μm

    0.15 ...  1.5

    Pellicle frame maximum height (at each side of a mask), mm

    6.5

    Data formats    

    ZBA, GDS, MEBES, DXF,

    other formats as optional

    Power consumption, not more than, kW

    1.8

  • EM-6429, -01 Wafer Defect Inspection System
    Die-to-die inspection of photoresist, metal, polysilicon, nitride, oxide and silicon to detect defects caused by dust, residual resist; scratches, mouse bites, protrusions, breaks, etc. Inspection in reflected light or dark field wafer illumination. ...

  • EM-6429

    EM-6429-01

    Minimum detected defect size, μm

    0.25

    0.18

    Wafer diameter, mm

    100,150

    150,200

    Inspection throughput, mm²/s

    15

    10

    Power consumption, not more than, kW

    1.5


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