YOUNGDO GLOBAL CO,. LTD

13380 Telge Road, unit#804
Cypress,  TX  77429

United States
http://www.youngdo-global.com
  • Booth: 227


Youngdo Global is a Grower Manufacturer in South Korea.

Youngdo Global is a Grower Manufacturer  in South Korea.

Braches are located in China, Japan and USA. 

key members of us have numerous years of Semiconductor Si wafer manufacturing experience. 

As the demand of Semiconductor chip increases, the amount of consumables to manufacture semicon chips increase as well. 

Especially, high purity monocrystalline Silicon parts are very critical consumable for the semiconductor chip processing. 

Many companies announced massive investment to secure the semiconductor chip production line, therefore it is expected that the demand of monocrystalline part will grow significantly. 

Our plan is to produce monocrystalline Silicon ingot and process to meet the customer's need in the US. 

If we can get funding, we will bring our technology and a equipment to the US for qualification. 


 Products

  • PSG-45
    450 mm Grower...

  • ITEM

    Basic SPEC.

    Ingot Diameter

    320~ 450mm

    Pull Chamber Height

    2900mm

    Pull Chamber ID

    Φ550 mm

    Furnace Diameter

    ID 1350mm

    Wire Dia & Travel Stroke

    Φ4.0, 6100mm (MAX : 7500mm)

    Seed Lift Speed

    0.1~10mm/min (MAX:1200mm/min)

    Seed Rotate Speed

    0~30 RPM

    Crucible Travel Stroke

    850mm/min (MAX:950)

    Crucible Lift Rate

    0.001~1mm/min (MAX : 200mm/min)

    Crucible Rotate Speed

    0~10 RPM

    Reflector Stroke

    400mm

    Hot Zone Dimension

    32”

    Charge

    400Kg (MAX. 450Kg)

    Chamber Material

    Inside : SUS316L/Outside : SUS304

    Argon Pressure & Flow

    2~3Kg/Cm2 / MAX Flow 200LPM

  • PSG-30
    307 mm Grower...

  • ITEM

    Basic SPEC.

    Ingot Diameter

    307mm (12″ Wafer)

    Pull Chamber Height

    3600mm

    Pull Chamber ID

    Φ440 mm

    Furnace Diameter

    ID 1350mm

    Wire Dia & Travel Stroke

    Φ4.0, 6100mm (MAX : 7500mm)

    Seed Lift Speed

    0.1~10mm/min (MAX:1200mm/min)
    Position Resolution : 0.001mm/pulse

    Seed Rotate Speed

    0~30 RPM

    Crucible Travel Stroke

    ≥ 850mm (MAX : 950mm)

    Crucible Lift Speed

    0.01~1mm/min (MAX : 200mm/min)
    Position Resolution : 0.001mm/pulse

    Crucible Rotate Speed

    0~10 RPM

    Reflector Stroke

    300mm

    Hot Zone Dimension

    32″

    Charge

    400Kg (MAX. 450Kg)

    Chamber Material

    Inside : SUS316L/Outside : SUS304

    Argon Pressure & Flow

    2~3Kg/Cm2 / MAX Flow 200LPM

  • Silicon Electrode
    Application : As a core component used in the plasma etching process, it directly affects the rate of production of semiconductor chips. Type : Electrode, Cathode Inner Cell, Shower Head, G.S.P, G.D.P, etc. ...

  • Item

    Silicon Electrode

    Description

    The Plasma gas following through the micro holes of Silicon plate to etch the wafer

    Application

    Etcher

    Type

    Si Electrode, Shower Head, Cel Inner

    Material

    Single Crystal Silicon

    Out Diameter

    Ø600max

    Resistivity

    Low Res. < 0.1ohm.cm
    Middle Res. 1~20ohm.cm
    High Res. 60~90ohm.cm

    Gas Hole

    Diameter 0.4~1.0

    Roundness

    Concentricity 0.01

    Surface Condition

    Etching, Polishing, Lapping, Cleaning

    Surface Flatness

    0.01

    Machining Precision

    0.05


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