Annealsys

The AS-One RTP system has been specially developed to meet the requirements of universities, research laboratories, quality control and small-scale production. The high reliability guarantees low cost of ownership.

The clam shell style design of the process chamber gives full access to the bedplate and provides easy loading and unloading of the wafers and practical thermocouple installation. The AS-One can receive a turbo molecular pumping unit in order to provide ultra-clean and oxygen-free process environment.

The cold wall chamber and extended temperature range provides outstanding process capabilities including annealing, dry and wet oxidation, nitridation, selenization, sulfurization, RTCVD of graphene and h-BN as well as ALD of Al2O3, ZnO and other materials.

The machine can be used for a wide range of applications including optoelectronics, MEMS, power components (SiC, GaN), etc.

The AS-Premium is a 6-inch infrared lamp RTP system. The machine is designed to be versatile to meet customer requirements with annealing temperature up to 1250°C. The machine has vacuum capability and can handle hazardous gases.

The process chamber can be provided with top heating or top and bottom heating. The system can be used for R&D applications with manual loading and can be provided for production applications with a cassette to cassette loading or a vacuum cluster tool.

The high vacuum capability combined with a loadlock offers ultra-clean process conditions for processes that are very sensitive to oxygen or moisture contamination.

The machine can be used for a wide range of applications including optoelectronics, MEMS, power components (SiC, GaN), silicon smoothening, etc.

The AS-Master system is 200 mm cold wall chamber Rapid Thermal Processor. The system can receive a susceptor with a maximum outer diameter of 240 mm for processing 200 mm wafers or batch of smaller wafers.

The cold wall chamber technology provides significant advantages: high process reproducibility, higher cooling rate, accurate temperature measurement and contamination free environment.

Several halogen lamp furnaces versions are available on the machine with a high temperature version that can perform processes up to 1450°C. The cold wall chamber technology associated with the pulse control mode of the lamp furnace allows processing thermally sensitive substrates.

The fast cooling option increases the cooling rate by 4 times compare to conventional RTP systems.

The system can be provided with customized loading systems including loading of the wafers on or into SiC coated graphite susceptors for annealing of compound semiconductors or materials with low infrared absorption.