ECM Greentech

PV20 furnace: G1 silicon ingot crystallization up to 20kg. Laboratory or pilot scale  / three-zone thermal set-up developed for Crystalmax® cast-mono technology / high reliability, reproducibility, and flexibility in the process growth of silicon ingots / User friendly and designed specifically for research and development.

PV80 furnace: G2 silicon ingot crystallization up to 80kg. Laboratory or pilot scale / three-zone thermal set-up developed for Crystalmax® cast-mono technology / high reliability, reproducibility, and flexibility in the process growth of silicon ingots / User friendly and designed specifically for research and development.

PV600 furnace: G5 and G6 silicon ingot crystallization up to 800kg. Mass production scale / 3 heaters hot zone and innovative cooling device developed for Crystalmax® cast-mono technology / capacity to produce high ingot quality suitable to process high efficiency solar cells (PERC/Passivated Contacts technology) / suitable with large size wafers production from M2 to M6 and M12 wafers.

PV1300 furnace: G8 silicon ingot crystallization up to 1500kg. Mass production scale / 3 heaters hot zone and innovative cooling device developed for Crystalmax® cast-mono technology / capacity to produce high ingot quality suitable to process high efficiency solar cells (PERC/Passivated Contacts technology) / suitable with large size wafers production from M2 to M6 and M12 wafers.

Cyberstar Czochralski puller furnaces, offered by ECM Greentech, come in a variety of sizes, heating power elements and current with the capability of producing up to 100 kg single crystals under controlled partial pressure of oxygen and/or inert gas. The heating technology can be inductive or resistive depending on the process requirements and can reach a working temperature up to 2300°C, with a crucible diameter up to 400 mm. All machines are equipped with the precise and stable Cyberstar pulling head having a conversion rate of 0.01 to 100 mm/h translation speed. Due to the use of an intuitive and user friendly Cyberstar pulling software, full monitoring and control of the growth is made possible. A predefinition of the crystal geometry through the dedicated software window enables a fully automatic growthe of the crystal after the dipping of the seed. A full range of design are available for the Czochralski puller which makes it and solution for laboratory use in universities and R&D centers, and also can meet the requirements of industrial production.

– Oxypuller 20-04 Industrial Puller: Single crystals up to 20kg (chamber topology: vertical axis, front door opening)

– Oxypuller 05-03 R&D puller: Single crystals up to 5kg (chamber topology: horizontal axis, front door opening)

– Mini Oxypuller: Single crystals up to 300g (chamber topology: horizontal axis, front door opening)

– Oxypuller 20-04: Single crystals up to 100mm diameter (chamber topology: vertical axis, front door opening)

– Oxypuller 30-06: Single crystals up to 150mm diameter (chamber topology: vertical axis, opening along an equatorial plane)

– Oxypuller 30-08: Single crystals up to 200mm diameter (chamber topology: vertical axis, opening along an equatorial plane)

– Oxypuller 30-10: Single crystals up to 250mm diameter (chamber topology: vertical axis, opening along an equatorial plane)

Semco Tubestar is the compact batch-type, single or multi-chambers horizontal furnace offered by ECM Greentech. Key characteristics of this furnace line are: high precision semiconductor processing combined with industrial process control, integration modularity, and a user-friendly interface. Each populated chamber can be independently configured and operated in a large range of atmospheric, sub-atmospheric or low pressure processes. The TubeStar furnace can also handle multiple gases and liquid precursors with a temperature range from 200 to 1300°C. Its modular design allows to meet a large range of clean thermal treatment for universities, research laboratories, or small production facilities.

TS150-XT: up to 150mm wafer size
TS200-XT: up to 200mm wafer size
X = chamber/level qty from 1 to 4

Atmospheric Pressure Processes

• Dry oxydation with O2
• Pyrolithic oxidation with H2/O2 torch
• Wet Oxide with Pure DI water steamer
• Boron or phosphorous dope with liquid, solid or gas source
• High temperature diffusion of P or P junction

Low CoO Reduced Pressure Processes

• LYDOP phosphorous dope with POCl3 or PH3
• LYDOP boron dope with BCl3
• LYSINTER forming gas to 100% H2 annealing
• LYTOX dry or wet extreme precision oxides

Low Pressure CVD

• LPCVD Nitride: Stochiometric, Low-Stress, Oxynitride
• LPCVD Poly : Flat, Intrinsic or p/n-doped
• LPCVD a-Si: Amorphous, Low-Stress
• LPCVD SiPOS & MTO
• LPCVD 3C-SiC
• LPCVD Si on Sapphire
• LPCVD TEOS : Undoped, PSG/BPSG, Conformal
• LPCVD LTO : Undoped, PSG/BPSG
• LPCVD HTO
• LPCVD Tungsten
• Low temperature Annealing, Sinter, Alloy