MOCVD system has accomplished an epoch-making mass production mechanism of FeRAM-LSI by continous research on film deposition of ferroelectrics such as PZT(Lead Zirconate Titanate) , SBT(Strontium Bismuth Tantalete), which has been difficult to do by the usual CVD mechanism.
MOCVD system is sure to make a marvelous development in production of the next generation FeRAM-LSI. Also, this system is applicable to a far broader field including FeRAM because this system is able to perform film deposition of metal oxides of various compositions as well as that of electrode metal and PZT/SBT.
The data of BaTiO3 (oxide of titan and barium) film have been reported. The data of dielectric constant have been reported.
The data of various films deposited by MOCVD have been reported.
The data of ferroelectrics film, high-k film, and electrode film will be
For realization of this completely new MOCVD system, WACOM R&D and Dr. Toda of YamagataUniversity, under assistance of M. Watanabe & Co., Ltd., worked together to develop a unique mechanism which was not found in the usual CVD system.
Details of this new mechanism were reported at the domestic and foreign Applied Physics Societies and ISIF* to be highly evaluated.
ISIF - International Symposium on Integrated Ferroelectrics