IMT Co., Ltd

Suwon-si,  Gyounggi-do 
Korea (South)
http://www.imt-c.co.kr
  • Booth: 1150

Welcome IMT dry cleanng and EUV Mask solutions.

Overview

We have been developing and improving dry cleaning technologies
for over 20 years

Our dry-cleaning technology is applied on producing high-tech products such as semiconductor, display, smart phone and etc. In the global market, its excellent performance is proven by numerous customers.
We provide customers with solutions that use laser and COinstead of water or chemical to remove different types of foreign matters or particles coming from the process of manufacturing the high-tech products.

Advantages of Dry Cleaning Technology 

  • Eco-friendly cleaning without using chemicals/water
  • Fast cleaning for higher productivity
  • Safe cleaning without damages on product
  • Compact design with small footprint
  • Economical cleaning with low cost of ownership 


  Products

  • SOL A5.0 B5.0
    EUV Mask Annealing System, EUV Mask Baking System...

  • SOL A5.0 EUV Mask Annealing System

    - Laser heat treatment of EUV Mask for semiconductor lithography process

    - Refectivity control by laser treatment

    - Simpler than chemical method, reducing # of process steps

    - Software stability & robustness in HVM Field proven system

    SOL B5.0 EUV Mask Baking System

    - Market leading baking technology for EUV Mask PEB (Post Exposure Baking)

    - Sophisticated image processing algorithms for PEB application

    - Improving LWR (Line Width Roughness) IMT Patented Beam Delivery

    - Field Proven at customer site 

  • DANDI C3100
    Wafer Cleaning System...

  • DANDI C3100 Wafer Cleaning System

    - Dry cleaning of wafer surface using IMT CO2 MicrojetTM

    - Simple & Fast cleaning process

    - Safe cleaning without any pattern damage

    - Particle removal after HBM wafer dicing

    - Contamination removal during wafer level packaging

  • SOL T5.0
    EUV Mask EUV Pellicle Analysis System...

  • SOL T5.0 EUV Mask EUV Pellicle Analysis System 

    - Integration of SE, SR and ST

    - Easy and Robust Operation Based on Auto Align and Auto Mapping

    - Thickness, Composition and Optical Property Characterization of ARC (TaON), Abs(TaN), Cap(Ru), MoSi Multilayer and Pellicle

    - Thickness of Ultrathin Metal(Ru, TaXY), Mo Silicides 


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