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China Germanium Co., Ltd

Nanjing,  Jiangsu Province 
China
http://www.cnge.com.cn/
  • Booth: 5139

New material industry expert since 1960.

Overview

China Germanium Co., LTD. (CNGE) was founded in May 1960, previously Nanjing "718" factory of the former Ministry of metallurgical industry, and was the one of national key construction units during the "first five-year" period. CNGE is a professional new material technology enterprise engaged in R&D, production, sales, and recycling of rare metal "germanium" as the core and other advanced high-end infrared optical materials, optical components, and other High-Tech materials. Products are widely used in aerospace, solar photovoltaic, infrared field, laser, electronic communications, security cameras, automobile, medical treatment, fire protection, industry, and other fields. With the help of advanced technology and a perfect management system, CNGE has serviced many customers with "full series" industry integration services at home as well as abroad about advanced and high-end new materials with rare metals as the core. CNGE now has several advanced, highly intelligent, and perfect production lines for related products, of which the output and quality of germanium products are particularly prominent in the global market. 


  Press Releases

  • (Jun 21, 2023)

    Main Property Parameters

    Growth Method

    Czochralski

    Crystal System

    Cubic

    Crystal Lattice Constant

    a=5.65754 Å

    Density

    5.323g/cm3

    Melt Point

    937.4℃

    Doping Element

    no

    Sb

    Ga

    Type

    /

    N

    P

    Resistivity

    >35Ωcm

    0.01~35 Ωcm

    0.05~35 Ωcm

    EPD

    <4×103/cm2

    <4×103/cm2

    <4×103/cm2

    Dimension(mm)

    10x3,10x5,10x10,15x15,,20x15,20x20,

    Dia50.8 mm ,dia76.2mm, Dia100 mm

    Thickness

    0.5mm,1.0mm

    Polishing

    One side or two sides

    Crystal Orientation

    <100>,<110>,<111>,±0.5º

    Crystal Plane Orientation Accuracy

    ±0.5°

    Edge Orientation Accuracy

    2°(special requirements <1°)

    Bevel Wafer

    According to specific requirements, wafers with edge-oriented crystal planes inclined at a specific angle (inclination angle 1°-45°) can be processed.

    Surface Roughness

    ≤5Å(5µm×5µm)

    Packaging

    Clean bag (100), Super clean room (1000)

  • (Jun 21, 2023)

    Main Property Parameters

    Growth Method

    Czochralski

    Crystal System

    Cubic

    Crystal Lattice Constant

    a=5.65754 Å

    Density

    5.323g/cm3

    Melt Point

    937.4℃

    Doping Element

    no

    Sb

    Ga

    Type

    /

    N

    P

    Resistivity

    >35Ωcm

    0.01~35 Ωcm

    0.05~35 Ωcm

    EPD

    <4×103/cm2

    <4×103/cm2

    <4×103/cm2

    Dimension(mm)

    10x3,10x5,10x10,15x15,,20x15,20x20,

    Dia50.8 mm ,dia76.2mm, Dia100 mm

    Thickness

    0.5mm,1.0mm

    Polishing

    One side or two sides

    Crystal Orientation

    <100>,<110>,<111>,±0.5º

    Crystal Plane Orientation Accuracy

    ±0.5°

    Edge Orientation Accuracy

    2°(special requirements <1°)

    Bevel Wafer

    According to specific requirements, wafers with edge-oriented crystal planes inclined at a specific angle (inclination angle 1°-45°) can be processed.

    Surface Roughness

    ≤5Å(5µm×5µm)

    Packaging

    Clean bag (100), Super clean room (1000)

  • (Jun 21, 2023)
    Various crystals produced by China Germanium Co., Ltd. are widely used in medium wave infrared detectors and infrared thermal imagers, among which silicon (SI) and germanium (GE) are the most widely used infrared optical materials. They have the characteristics of metallic luster, hard and brittle, high refractive index, small dispersion, opaque in visible light band, but good transmittance in infrared band (3 ~ 5um). Due to the small proportion, light weight and high transmittance of monocrystalline silicon in the middle wave infrared optical system, Si is widely used as the material of optical lens and infrared window in the optical system, and it is widely used in the middle wave thermal imaging system of aerospace, aviation and ground.

    Product index:
    Material: Si LP5.5um
    Crystal form: N
    Resistivity: 5-40 Ω
    Crystal orientation: 111
    Specification: Φ4in、6in、8in,Or cut into small pieces
    Center thickness: 0.5mm
    Transmittance: 6-14um Tavg>85%

  Products

  • Customized indium phosphide substrate wafer
    InP(Indium phosphide) single crystal is periodic series Ⅲ, V compound semiconductor. The chemical formula is InP. Covalent bonding, there is a certain ionic bond component....

  • No.
    Items
    Standard Specification
    1
    Indium Phosphide Single Crystal
    2"
    3"
    4"
    2
    Diameter mm
    50.8±0.5
    76.2±0.5
    100±0.5
    3
    Growth Method
    VGF
    VGF
    VGF
    4
    Conductivity
    P/Zn-doped, N/(S-doped or un-doped), Semi-insulating
    5
    Orientation
    (100)±0.5°, (111)±0.5°
    6
    Thickness μm
    350±25
    600±25
    600±25
    7
    Orientation Flat mm
    16±2
    22±1
    32.5±1
    8
    Identification Flat mm
    8±1
    11±1
    18±1
    9
    Mobility cm2/V.s
    50-70, >2000, (1.5-4)E3
    10
    Carrier Concentration cm-3
    (0.6-6)E18, ≤3E16
    11
    TTV μm max
    10
    10
    10
    12
    Bow μm max
    10
    10
    10
    13
    Warp μm max
    15
    15
    15
    14
    Dislocation Density cm-2 max
    500
    500
    500
    15
    Surface Finish
    P/E, P/P
    P/E, P/P
    P/E, P/P
    16
    Packing
    Single wafer container sealed in aluminum composite bag.
  • Germanium Substrates & Wafers
    Fabrication of semiconductor devices, infrared optical devices, and solar cell substrates, and other materials....

  • Specification
    Density
    5.323g/cm3
    Melting poingt
    937.4℃
    Doped
    Undoped
    Doped Sb
    Doped In or Ga
    Type
     
    N
    P
    specific resistance
    >35Ωcm
    0.05Ωcm
    0.05~0.1Ωcm
    EPD
    <4×103 cm2
    <4×103 cm2
    <4×103 cm2

    Size(mm)

    10x3,10x5,10x10,15x15,20x15,20x20,Can be customized , special direction and size of the substrate

    Surface roughness

    Surface roughness(Ra):<=5A

    Polishing

    One side or two sides

  • Germanium wafer substrate excellent semiconductor
    Germanium wafer is an excellent semiconductor material and is widely used in a variety of applications such as sensors, Solar cells, Infrared optics applications, high brightness LEDs, and various semiconductor applications....

  • Product Name
    Ge Substrate
    Material
    Germanium
    Function
    Germanium wafer is an excellent semiconductor material and widely used in variety applications such as Sensor, Solar cell, Infrared optics applications, high brightness LEDs, and various semiconductor applications.
    Package
    Epi-ready

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