Perseus™

A bipolar pulsed generator that can produce waveforms on a wafer surface for improved ion energy distribution (IED) control compared to traditional RF or pulsed DC. The voltage, pulse width, pulse frequency, and burst patterns are all user controlled. Active energy recovery offers high-efficiency operation at high average power.

• Ion energy distributions produced by Perseus™ are close to monoenergetic, allowing for ultimate control over the electrode’s bias, which can lead to better selectivity and improved features at high aspect ratios.
• No matching network is required.

Perseus™ is an ideal choice for building out new state-of-the-art 300 mm processing facilities or retrofitting older 200 mm systems.

Tunable Ion Energy Distributions (IEDs)

Using only measurements internal to the power supply, an estimated IED can be calculated by the controller or other devices communicating with Perseus™ in real-time or post-process. This data can be used for precise control over the process in terms of ion energy, rather than power delivered to the plasma. Because the ion energy distribution for an individual pulse is very tight, and the voltage on the electrode is easily adjusted, unlimited IEDs can be generated over the duration of a process run, tailored to achieve specific process results.

Output Voltage Control (Multistate)

Output voltage can be adjusted on two timescales. For pulse-to-pulse adjustments, the pulse width can be reduced, which charges the load capacitance to a lower voltage. On longer timescales, the external DC supply set point can be changed.

Controller Options

An optional EHT controller allows for TCP/IP (EHTnet) or EtherCAT control. Other industrial protocols can be rapidly developed if needed. Alternatively, the pulse width and pulse repetition frequency can be controlled directly via fiber and an external signal generator.

Specifications

Matchless RF

A bipolar RF generator that can produce comparable waveforms on a wafer surface when compared to traditional RF or pulsed DC with more control and reduced complexity. The voltage, pulse width, pulse frequency, and burst patterns are all user controlled. 

• Very low impedance drive direct couples to plasma

• Matching network not required – reduces complexity

• No reflected power

• Highly controllable and precise output. Both pulsed or continuous operation possible

• Arc and fault protection

• Fast feedback and control or preprogrammed control possible (< 10 μs)

EHT's Matchless RF generators are an ideal choice for building out new state-of-the-art 300 mm processing facilities or retrofitting older 200 mm systems.

Output Voltage Control (Multistate)

Output voltage can be adjusted on two timescales. For pulse-to-pulse adjustments, the pulse width can be reduced, which charges the load capacitance to a lower voltage. On longer timescales, the external DC supply set point can be changed.

Controller Options

An optional EHT controller allows for TCP/IP (EHTnet) or EtherCAT control. Other industrial protocols can be rapidly developed if needed. Alternatively, the pulse width and pulse repetition frequency can be controlled directly via fiber or BNC and an external signal generator.

Specifications