EHT Semi

Seattle,  WA 
United States
http://ehtsemi.com
  • Booth: 6284

Precision Power to Improve Plasma Control for Etching

Overview

EHT Semi produces precision pulsed power systems for improving plasma control for semiconductor processes. Our power systems enable manufacturers to move beyond RF generators and drive wafer bias with optimized waveforms. The optimized waveforms allow for precision control of the ion energy distribution (IED) to map out arbitrary IEDs at the wafer surface. This enhanced control can increase the etching rate, improve the minimum critical dimension, and operate at higher efficiency.


  Products

  • Perseus™: 25 kW Bipolar Pulse Generator
    Perseus™ produces bipolar waveforms on a wafer surface for improved ion energy distribution (IED) control compared to RF or pulsed DC....

  • Perseus™

    A bipolar pulsed generator that can produce waveforms on a wafer surface for improved ion energy distribution (IED) control compared to traditional RF or pulsed DC. The voltage, pulse width, pulse frequency, and burst patterns are all user controlled. Active energy recovery offers high-efficiency operation at high average power.

    • Ion energy distributions produced by Perseus™ are close to monoenergetic, allowing for ultimate control over the electrode’s bias, which can lead to better selectivity and improved features at high aspect ratios.
    • No matching network is required.

    Perseus™ is an ideal choice for building out new state-of-the-art 300 mm processing facilities or retrofitting older 200 mm systems.

    Tunable Ion Energy Distributions (IEDs)

    Using only measurements internal to the power supply, an estimated IED can be calculated by the controller or other devices communicating with Perseus™ in real-time or post-process. This data can be used for precise control over the process in terms of ion energy, rather than power delivered to the plasma. Because the ion energy distribution for an individual pulse is very tight, and the voltage on the electrode is easily adjusted, arbitrary IEDs can be generated over the duration of a process run, tailored to achieve specific process results.

    Output Voltage Control (Multistate)

    Output voltage can be adjusted on two timescales. For pulse-to-pulse adjustments, the pulse width can be reduced, which charges the load capacitance to a lower voltage. On longer timescales, the external DC supply set point can be changed.

    Controller Options

    An optional EHT controller allows for TCP/IP (EHTnet) or EtherCAT control. Other industrial protocols can be rapidly developed if needed. Alternatively, the pulse width and pulse repetition frequency can be controlled directly via fiber and an external signal generator.

    Specifications

    +Vout, pos. pk­, max

    11 kV+

    +Vout, pos. pk­, min

    <25 V

    Vout, pk-pk, max

    17 kV

    Velectrode voltage profile

    Load dependent, calculated in real-time

    DC input power

    25 kW

    DC Supply

    External, 208 VAC 3-Φ, or 480 VAC 3-Φ input

    Aux. AC Input Power

    120 VAC 1-Φ

    Pulse Repetition Frequency (PRF)

    300 kHz – 600 kHz

    Burst Repetition Frequency (BRF)

    100 Hz – 100 kHz

    Burst Duty Cycle

    1 – 100%

    Minimum Burst Length

    5 µs @ 400 kHz PRF

    Number of States

    Arbitrary

    State Transition Time

    5 µs @ 400 kHz PRF

    Output Connection

    Customizable. Options include: 3 m+ coaxial cable, direct connection

    Communication Protocol

    EHTnet, EtherCAT, TCP/IP

    Dimensions, switching module

    31.2” x 21.4” x 19.5” (79.4 cm x 54.4 cm x 49.5 cm)

    Dimensions, external DC supply

    4U, 19” rack-mount

    Cooling

    Water, 3.0 GPM, 16 – 35 °C (switching module)

    Water, 3.0 GPM, 25 °C max (DC supply)


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