Pivotal Systems

As process geometries within the semiconductor industry continue to shrink to 3nm and beyond, the need for highly accurate, responsive and repeatable gas flow control during wafer processing is essential. With the emergence of low gas flow rates, short processing times and continuous plasma processing, best-in-class MFCs are struggling to meet the accuracy, settling time and repeatability requirements demanded to ensure high yield and matched chambers.

Pivotal Systems’ GFC paves the way for the future of gas flow control. The GFC combines Pivotal's patented, high accuracy GFM™ system with patented control valve technology. As such, it leapfrogs the current MFC technology by offering an order of magnitude improvement on key flow metrics, thereby enabling advanced wafer-manufacturing processes. 

Feature Description:

Wide Flow Range:Full Scale 0.5−100%

Best Flow Accuracy: ±0.5% of Setpoint for 0.5−100% Full Scale

Fastest Settling Time for Turn-On and Turndown:  ≦ 100ms:10% -100% Full Scale; ≦ 300ms:0.5% -10% Full Scale 

Effect of Pressure and Temperature: Invariant

Automated In Situ Calibration: NIST Traceable

Innovative Control Technology:Robust Design, No Orifice

As process geometries within the semiconductor industry continue to shrink to 3 nm and beyond, the need for highly accurate, responsive and repeatable gas flow control during wafer processing is essential. With the emergence of low gas flow rates, short processing times and continuous plasma processing, best-in-class MFCs Introduction are struggling to meet the accuracy, settling time and repeatability requirements demanded to ensure high yield and matched chambers.

Pivotal Systems’ high flow GFC paves the way for the future of gas flow control. The high flow GFC combines a differential pressure with patented control valve technology. As such, it leapfrogs the current MFC technology by offering an order of magnitude improvement on key flow metrics, thereby enabling advanced wafer-manufacturing processes. 

Feature Description:

Wide Flow Range:Full Scale 2.0−100%

Flow Accuracy:±1.0% of Setpoint for 10% -100% Full Scale; ±0.25% of full scale for 2.0−10.0%  Full Scale 

Fastest Settling Time for Turn-On and Turndown:  ≤300ms 10%-100% F.S. 

Innovative Control Technology:Robust Design, No Orifice

As process geometries within the semiconductor industry continue to shrink to 3nm and beyond, the need for highly accurate, responsive and repeatable gas flow control during wafer processing is essential. With the emergence of low gas flow rates, short processing times and continuous plasma processing, best-in-class MFCs are struggling to meet the accuracy, settling time and repeatability requirements demanded to ensure high yield and matched chambers.

Pivotal Systems’ GFC paves the way for the future of gas flow control. The GFC combines Pivotal's patented, high accuracy GFM™ system with patented control valve technology. As such, it leapfrogs the current MFC technology by offering an order of magnitude improvement on key flow metrics, thereby enabling advanced wafer-manufacturing processes. 

Feature Description:

Widest Flow Range with Accuracy (Actual Gas) : 0.5−100% Full Scale

Best Flow Accuracy: ±0.5% of Setpoint for 0.5−100% Full Scale

Fastest Settling Time for Turn-On and Turndown:  :10% -100% FS ≦ 100ms; 0.5% -10% FS ≦ 300ms

Effect of Pressure and Temperature: Invariant

Automated In Situ Calibration: NIST Traceable

Innovative Control Technology:Robust Design, No Orific