ATECOM TECHNOLOGY CO., LTD

1.Silicon Epitaxial wafers

Dia : 4"~ 8"
Dopant : N/N+, P/P+. N/P+, P/N+, N/N/N+, N/P/N+........
Thickness : 0.1~150um, multiple layers are available
Resistivity : 0.003~1200 ohmcm

2.Silicon CZ/MCZ/FZ/NTD substrate

Dia : 4"~ 12"

Dopant : Arsenic, (Red) Phosphorus, Antimony, Boron.

Orientation : <111>,<100>, <110>

Resistivity : 0.001~20,000 ohm-cm

Surface : As cut, lapped, etched and polished.

 3.SOI wafer

Dia : 4"~ 8"

Device Layer Thickness: 0.5~400um

BOX Layer Thickness: 0.02~4um

Handle Layer Thickness: Customized.

InP: 2"~4" 

GaAs: 2"~6" 

TFLN wafer

SiC Wafer - Substrate & Epitaxy

Diameter: 4”, 6”, 8”

Type: 4H-N, 4H-SI, AR, Glass

GaN Epitaxial Wafer – GaN/Si, GaN/SiC, GaN/Sapphire

Diameter: 2”~12”

Substrate Type: Silicon, Sapphire, SiC

AlGaN/GaN Thickness: 2~50nm, Customizable

Ga2O3Wafer- Substrate & Epitaxy

Diameter: 2”, 4”, 6”

Orientation: (001) (-201)

Conductive Type/ Dopant: N/Sn, N/Un-doped, Semi Insulating/Fe

FWHM: [010][102] <150 Arc-Sec