EHT Semi

Seattle,  Washington 
United States
http://ehtsemi.com
  • Booth: 6180

Precision Power to Improve Plasma Control for Etching

Overview

EHT Semi is pioneering novel, matchless RF and tailored waveform generators to improve plasma control and reliability for next-generation semiconductor manufacturing. Processing Power Challenges Today Traditional RF power delivery relies on matching networks to compensate for the plasma’s constantly changing impedance. As processes demand fast and reliable breakdown, quick transitions, and tighter control, these networks are a bottleneck with a slow response, added complexity, and power loss. The EHT Semi Solution EHT's Orion Direct RF System eliminates matching networks and delivers power directly to the plasma with real-time impedance handling. This breakthrough reduces footprint, improves efficiency, and lowers cost of ownership. They increase uniformity, stability, and reliability to give tool makers the performance edge needed for next-generation semiconductor manufacturing.


  Products

  • Orion™ - Direct RF™ System

    OrionTM is EHT Semi’s advanced matchless RF power system that directly drives the plasma and eliminates the traditional match box. This system provides efficient and agile power modulation for precision plasma control to enable the next-generation semiconductor manufacturing applications.

    Application: Plasma generation (ICP and CCP) & wafer bias

    Power: 5 kW

    Frequency: 2 or 13.56 MHz

    Benefits

    • Couples to the plasma without a matching network
    • Faster and more reliable plasma ignition than traditional RF generators with a matching network
    • Maintains a stable plasma through challenging process transitions (e.g., gas, pressure, and power)
    • Enables rapid transitions between power levels
    • No reflected power
    • Compact enough to replace matching network on tool
    ...

  • Perseus™ - Tailored Waveform Generator

    Perseus redefines precision in wafer biasing with innovative bipolar pulsed power technology. Designed for next-generation fabs, it ensures cleaner profiles, tighter ion energy control, and energy-efficient performance for the most demanding semiconductor processes.

    Application: Wafer bias with precision ion energy control

    Benefits

    • More tightly controlled wafer voltages result in narrower ion energy distributions, which allows for increased control over process results including smaller critical dimensions.
    • Precision control for ALE manufacturing
    • Increased flexibility for multistate or multilevel operation (continuous states with fast transitions between states).
    • Fast rise and fall times compared to RF sine-wave generators results in increased etch time per cycle.
    • No matching network is required, reducing complexity and size.
    • Very broad range of dynamically-adjustable pulse repetition frequencies.
    • Manufacture high-aspect-ratio structures and smaller critical dimensions
    • Perseus™ is an ideal choice for building out new state-of-the-art 300 mm processing facilities or retrofitting older 200 mm systems.

    There are Perseus model to meet a range of applications from atomic layer etching and deposition to dielectric high aspect ratio etching.

    ...


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