Shandong Liguan Micro Electronics Equipment Co., Ltd

Jinan,  Shandong 
China
http://www.liguanchina.com
  • Booth: E6219

Overview

Established in 2013, Shandong Liguan Microelectronics Equipment Co, Ltd. is a national high-tech company. After ten years of development, it has become a leading manufacturer of semiconductor process equipment in China, which mainly engaged in research and development, production, sales and specialized technical services of semiconductor special equipments.

The company always adheres to the scientific development concept of "scientific and technological innovation is the primary productive force", closely links the company development path with the technical research and development strength, and provides customers with high-quality products and perfect services to go forward towards internationalization and modernization.

The products are widely used in the manufacturing fields of new electronic devices such as integrated circuits, power semiconductors, compound semiconductors, 5G chips, optical communications, MEMS, etc., which are committed to the revitalization and development of semiconductor equipment industry.

Main products

First generation semiconductor equipments: LPCVD, PECVD, oxidation/diffusion equipment, LPE epitaxial equipment, vacuum annealing equipment, heater.

Third generation semiconductor equipments: HVPE single crystal growth equipment, PVT single crystal growth equipment, SiC seed crystal bonding equipment, MPCVD equipment, SiC high temperature oxidation equipment, SiC high temperature annealing equipment.

Crystal equipments: Crystal lifting equipment, crucible lowering equipment.

Graphene equipments: graphene film CVD equipment, graphene roll-to-roll equipment.


  Products

  • LPCVD
    LPCVD equipment is one of the important equipments for semiconductor integrated circuit manufacturing, which is mainly used for the growth of polysilicon, silicon nitride and silicon oxide films....

  • 产品特点:

    ●全自动传送,定位精准,稳定可靠

    ●高洁净度工艺环境,有效控制污染

    ●成膜均匀性高

    ●温度控制采用串级控制方式,对基片实际温度进行实时智能控制

    ●装载采用碳化硅(SiC)悬臂桨,避免了与工艺管磨擦产生粉尘

    ●工作压力闭环自动控制,提高工艺稳定性和重复性

    技术指标:

    ●晶片类型:6/8/12英寸晶圆

    ●工作温度范围:500℃-1000℃

    ●恒温区长度:≥860mm

    ●控温精度:±1℃

Categories