宁波恒普真空科技股份有限公司

宁波市,  浙江 
China
http://www.hiper.cn

• Booth: E1735

恒普是半导体领域的专业方案解决商，恒普欢迎您的随时询问！

Overview

宁波恒普真空科技股份有限公司是一家以材料研究为基础，以高温热场环境控制为技术核心的宽禁带半导体领域的关键解决方案供应商，主要从事半导体相关材料、碳化硅晶体生长炉、碳化硅同质外延设备等热工装备的研发、生产和销售。
恒普科技凭借在材料研究和设备设计方面，十年的控温控压技术沉淀，通过温度闭环控制，高精度压力控制，轴径向分离技术，以及双控技术，为SiC长晶行业提供更大、更快、更厚的解决方案，为国产外延设备突破到国际水准做出贡献.

  Press Releases

• A new generation of SiC crystal growth materials (May 18, 2023)

  随着导电型SiC衬底的逐渐量产，对工艺的稳定性、可重复性都提出更高的要求。特别是缺陷的控制，炉内热场微小的调整或漂移，都会带来晶体的变化或缺陷的增加。后期，更要面临“长快、长厚、长大”的挑战，除了理论和工程的提高外，还需要更先进的热场材料作为支撑。使用先进材料，长先进晶体。

  热场中坩埚的材料，石墨、多孔石墨、碳化钽粉等使用不当，会带来碳包裹物增多等缺陷。另外在有些应用场合，多孔石墨的透气率不够，需要额外开孔来增加透气率。透气率大的多孔石墨，面临加工、掉粉、蚀刻等挑战。

  恒普科技推出全新一代SiC晶体生长热场材料，多孔碳化钽。全球首发。

  
  碳化钽的强度和硬度都很高，做成多孔状，更是挑战。做成孔隙率大、纯度高的多孔碳化钽更是极具挑战。恒普科技突破性的推出大孔隙率的多孔碳化钽，孔隙率最大可以做到75%，国际领先。

  气相组元过滤，调整局部温度梯度，引导物质流方向，控制泄露等都可以使用。可与恒普科技另外一款固体碳化钽（致密）或碳化钽涂层，形成局部不同流导的构件。

  部分构件可以重复使用。

  技术参数

  • 孔隙率 ≤75%   国际领先
  • 形状：片状、筒状  国际领先
  • 孔隙度均匀

  With the gradual mass production of conductive SiC substrates, higher requirements are placed on the stability and repeatability of the process. Especially the control of defects, the slight adjustment or drift of the thermal field in the furnace will bring about the change of crystal or the increase of defects. In the later stage, we will face the challenge of "growing faster, thicker, and bigger". In addition to the improvement of theory and engineering, more advanced thermal field materials are also needed as support.Use advanced materials and grow advanced crystals.

  Improper use of crucible materials in the thermal field, such as graphite, porous graphite, and tantalum carbide powder, will cause defects such as increased carbon inclusions. In addition, in some applications, the air permeability of porous graphite is not enough, and additional openings are required to increase the air permeability. Porous graphite with high air permeability faces challenges such as processing, powder dropping, and etching.

  Hengpu Technology launched a new generation of SiC crystal growth thermal field materials,Porous Tantalum Carbide.World premiere.

  
  Tantalum carbide has high strength and hardness, making it porous is even more challenging. It is extremely challenging to make porous tantalum carbide with large porosity and high purity. Hengpu technology breakthroughIntroduction of Porous Tantalum Carbide with Large Porosity, the porosity can be up to 75%,Internationally leading.

  Gas-phase component filtration, adjustment of local temperature gradients, direction of material flow, and leakage control can all be used. Compatible with another Hemp TechnologySolid tantalum carbide (dense) or tantalum carbide coating, forming components with locally different conductances.

  Some components can be reused.

  Function

  • Porosity ≤75%   Internationally leading.
  • Shape: sheet, tube  Internationally leading.
  • uniform porosity

• The key material to break through the growth of sic crystals (May 18, 2023)

  “一次传质”工艺是采用一次传质的新热场，传质效率提高且基本恒定，降低再结晶影响（避免二次传质），有效降低了微管或其它关联晶体缺陷。平衡气相组分，隔断微量杂质，调节局部温度，减少碳包裹等物理性颗粒，在满足晶体可用的前提下，晶体厚度大幅增加，是解决晶体长厚的核心技术之一。

  恒普科技在2021年，推出的“一次传质”的新工艺，虽然效果突出，但采用筒形多孔石墨用料多，且大孔隙率的多孔石墨需要依赖进口，急剧增加了晶体生长的成本，大大阻碍了"一次传质“新工艺的推广，使sic晶体生长技术无法与国际同步。

  为了推动晶体 “长快、长厚，长大”，如何解决多孔石墨的瓶颈？是行业的迫切需求，多孔石墨的孔隙率、孔隙大小、空隙分布、强度、最薄可加工尺寸、蚀刻特性等技术参数都极具挑战，与工艺匹配更是难点。

  恒普科技突破性的解决了多孔石墨的技术，加速推动“一次传质”新工艺的使用，使行业能成本可循环、快速、灵活的与国际技术同步发展，解决关键材料“进口”依赖，并达到国际领先水平。

  技术特点：

  • 孔隙率最高可达65%（国际领先）
  • 空隙分布均匀；
  • 批次稳定性高；
  • 强度高，加工性可以达到≤1mm超薄壁圆筒形状 (国际领先）。

  The "primary mass transfer" process adopts a new thermal field for primary mass transfer. The mass transfer efficiency is improved and basically constant, reducing the impact of recrystallization (avoiding secondary mass transfer), and effectively reducing micropipes or other associated crystal defects. Balancing gas phase components, blocking trace impurities, adjusting local temperature, reducing physical particles such as carbon wrapping, and greatly increasing crystal thickness under the premise of satisfying crystal availability are one of the core technologies to solve crystal growth and thickness.

  In 2021, Hengpu Technology launched a new "one-time mass transfer" process. Although the effect is outstanding, the use of cylindrical porous graphite requires a lot of materials, and the porous graphite with large porosity needs to rely on imports, which dramatically increases the cost of crystal growth. , greatly hindered the promotion of the "one-time mass transfer" new process, and made the sic crystal growth technology unable to keep pace with the international.

  In order to promote crystals to "grow fast, grow thick, and grow up", how to solve the bottleneck of porous graphite? It is an urgent need of the industry. The technical parameters of porous graphite such as porosity, pore size, pore distribution, strength, thinnest machinable size, and etching characteristics are extremely challenging, and matching with the process is even more difficult.

  Hengpu Technology has made a breakthrough in solving the technology of porous graphite, accelerating the use of the new "primary mass transfer" process, enabling the industry to develop cost-recyclable, fast, and flexible synchronously with international technologies, and solve the dependence on "import" of key materials. And reach the international leading level.

  Technical features：

  • Porosity up to 65% (international leading)
  • The voids are evenly distributed;
  • High batch stability;
  • High strength, processability can reach ≤1mm ultra-thin-walled cylindrical shape (leading in the world).

• Breakthrough TaC Coatings of SiC Crystal Growth (May 18, 2023)

  碳化硅晶体生长时，晶体轴向中心与边缘的生长界面的“环境”不同，使边缘的晶体应力徒增，且晶体边缘由于石墨档环"碳”的影响，容易产生“综合缺陷”，如何解决边缘问题或增加中心有效面积（95%以上）是重要的技术课题。

  随着“微管”“包裹物”等宏观缺陷逐渐被行业控制，挑战碳化硅晶体“长快、长厚、长大”，边缘“综合缺陷”就异常突显，随着碳化硅晶体直径、厚度的增加，边缘“综合缺陷”会以直径平方及厚度成倍数增加。

  采用碳化钽TaC涂层, 是解决边缘问题，提高晶体生长质量，是“长快、长厚、长大”的核心技术方向之一。为了推动行业技术发展，解决关键材料“进口”依赖，恒普科技突破性解决了碳化钽涂层技术（CVD），达到了国际先进水平。

  碳化钽TaC涂层，从实现的角度并不困难，用烧结、CVD等方法都容易实现。烧结法，采用碳化钽粉或前驱体，添加活化成分（一般为金属）和粘接剂（一般为长链高分子），涂覆到石墨基材表面高温烧结。CVD法，采用TaCl5+H2+CH4，在900-1500℃，沉积到石墨基体表面。

  但碳化钽沉积的晶向，膜厚均匀、涂层与石墨基体的应力释放、表面裂纹等基础参数，却极具挑战。特别是能在sic晶体生长环境下，有稳定的使用寿命是核心参数，是最难点。

  When silicon carbide crystals grow, the "environment" of the growth interface between the axial center of the crystal and the edge is different, which increases the crystal stress at the edge, and the crystal edge is prone to "comprehensive defects" due to the influence of the "carbon" of the graphite ring. Solving the edge problem or increasing the effective area of the center (more than 95%) is an important technical topic.

  As macroscopic defects such as "micropipes" and "wrappings" are gradually controlled by the industry, challenging silicon carbide crystals to "grow fast, grow thick, and grow up", the edge "comprehensive defects" are extremely prominent. The increase of the edge "comprehensive defects" will increase in multiples of the square of the diameter and the thickness.

  The use of tantalum carbide TaC coating is to solve the edge problem and improve the quality of crystal growth, which is one of the core technical directions of "growing fast, growing thick and growing". In order to promote the development of industry technology and solve the dependence on "import" of key materials, Hengpu Technology has made a breakthrough in solving the tantalum carbide coating technology (CVD), which has reached the international advanced level.

  Tantalum carbide TaC coating is not difficult from the perspective of realization, and it is easy to realize by sintering, CVD and other methods. The sintering method uses tantalum carbide powder or precursors, adds active components (usually metals) and binders (usually long-chain polymers), and coats them on the surface of graphite substrates for high-temperature sintering. The CVD method uses TaCl5+H2+CH4 at 900-1500°C to deposit on the surface of the graphite substrate.

  However, basic parameters such as crystal orientation of tantalum carbide deposition, uniform film thickness, stress release between coating and graphite substrate, and surface cracks are extremely challenging. Especially in the sic crystal growth environment, having a stable service life is the core parameter and the most difficult point.

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