To address the unique implant needs for devices designed for the Internet of Things (IoT) and power
applications, Axcelis Technologies has developed the most versatile high current implanter to date.
The Purion H200 is Axcelis’ state of the art single wafer high current medium energy implanter. The
Purion H200 provides the user with the industry’s widest energy range on a high current platform with
energies as low as 10keV up to a maximum single charge implant energy of 230keV. This is achieved
by combining the efficient beam transport and beam current from Purion H with the post accel
capability of Purion M. The Purion H200 Power Series has the ability to run high temperature implants
up to 650°C wafer temperature, providing a unique high current implant solution for SiC power devices.