WINSHENG MATERIAL TECHNOLOGY CO., LTD.

產品簡述 
Product Description

碳化矽元件具有絕佳特性以實現高電壓、低損耗、高頻及高溫操作等優勢，足以大幅降低能源消耗問題，並可應用於體積較小的產品，例如:電動車、高鐵及軌道車、太陽能、風力發電..等。
SiC devices have excellent characteristics that realize high blocking voltage, low current loss, high-frequency operation and high-temperature operation. Power semiconductors that use SiC achieve a significant reduction in energy consumption, and can be used to develop smaller and lighter products.

產品名稱
Product Name

導電型碳化矽晶圓
N-type Silicon Carbide Substrate

尺吋 size

4吋 4 inch

6吋 6 inch

8吋 8 inch

直徑 Diameter

100 mm +0.0/-0.5 mm

150 mm ±25.0 mm

200 mm ±0.2 mm

厚度 Thickness

350 μm ±25.0 μm

350 μm ±25.0 μm

350 μm ±25.0 μm

電阻率 Resistivity

0.015Ω·cm ~ 0.028Ω·cm

0.015Ω·cm ~ 0.028Ω·cm

0.015Ω·cm ~ 0.025Ω·cm

平坦度 TTV

≦10 μm

≦10 μm

≦10 μm

彎曲度 BOW

≦20 μm

≦20 μm

≦20 μm

翹曲度 WARP

≦40 μm

≦40 μm

≦40 μm

產品簡述 
Product Description

碳化矽元件具有絕佳特性以實現高電壓、低損耗、高頻及高溫操作等優勢，足以大幅降低能源消耗問題，並可應用於體積較小的產品，例如:電動車、高鐵及軌道車、太陽能、風力發電..等。
SiC devices have excellent characteristics that realize high blocking voltage, low current loss, high-frequency operation and high-temperature operation. Power semiconductors that use SiC achieve a significant reduction in energy consumption, and can be used to develop smaller and lighter products.

產品名稱
Product Name

導電型碳化矽晶錠
N-type Silicon Carbide Ingot

尺吋 size

6吋 6 inch

尺吋 size

8吋 8 inch

電阻率 Resistivity

0.015Ω·cm ~ 0.028Ω·cm

電阻率 Resistivity

0.015Ω·cm ~ 0.028Ω·cm

直徑 Diameter

150.25 mm ±0.25 mm

直徑 Diameter

200.25 mm ±0.25 mm

表面晶向偏離度
Surface orinentation error

4 ̊ toward <11-20>± 0.2 ̊

表面晶向偏離度
Surface orinentation error

4 ̊ toward <11-20>± 0.5 ̊

主參考面晶向
Primary flat orinentation

<1-100>±5°

Notch 晶向
Notch orientation

<1-100>±5°

主參考面長度
Primary flat length

47.5 mm ±1.5 mm

Notch 深度
Notch Depth

1 ~ 1.5 mm