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PENTAPRO MATERIALS INC.

Zhubei City,  HsinChu 
Taiwan
http://www.ppmiglobal.com/website/index.php
  • Booth: R7001

We are honored to have you at our exhibit。

Overview

PENTAPRO MATERIALS INC.

Established: March 2011

Capital: NT$ 589 million

President: Wen-Zhe Guo

Main Products: Semiconductor-grade ultra-high purity precursors

Production Facilities: Located in Tainan Science Industrial Park

Factory Capacity: Legally capable of manufacturing Class 3 hazardous chemicals

Vision: PentaPro is committed to becoming the leading global supplier of ALD precursors, developing and manufacturing precursors for semiconductor industry applications, with purity levels of up to 8N for various chemical elements.

Core Values:

Integrity: Doing the right thing, being honest, and competing legally

Commitment: Upholding commitments to employees, customers, shareholders, suppliers, and society

Innovation: Challenging the impossible, not just in ideas but in execution

Customer Satisfaction: Meeting customer needs, solving customer problems, and building partnerships

Core Business

Precursors Business

Cylinder Cleaning and Refilling Services

Specialty Gases and Custom Chemical Development

Products and Services

Precursors: TSA,TMAl, TEAl, TMGa, TEGa, TMIn, TESb, DEZn, CCTBA, etc.

Specialty Gases: DUV, ArF laser, KrF laser, etc.

Cylinder Cleaning and Inspection Services: Residue removal, helium leak detection, cylinder regeneration, etc.

R&D and Technology

Unique R&D Capabilities: Trace analysis, purification, and synthesis of precursors

Technology Roadmap: High dielectric constant materials, wide bandgap materials, corrosion-resistant materials, high thermal conductivity insulating materials, etc.

Quality and Certifications

ISO 9001:2015 Quality Management System

ISO 14001:2015 Environmental Management System

ISO 45001:2018 Occupational Health and Safety Management System

TAF Certification: Ultra-trace analysis capabilities

  Press Releases

  • (Jul 26, 2025)

  Products

  • TSA Trisilylamine 三甲矽烷基胺
    High Purity of ALD/CVD Precursors :

    TSA (Semi Grade)
    Electronics Specialty Materials
    Precursor TSA (Trisilylamine)
    ...

    • PentaPro Materials Inc. 

    Property information

    CAS No 13862-16-3
    Formula

    (SiH3)3N
    Name

    Trisilylamine
    Chemical Formula

    107.33
    Appearance

    Liquid
    Stability

    Highly flammable liquid and vapor. In contact with water releases flammable gases which may ignite spontaneously.
    Relative density

    0.895(water =1)
    Melting Point

    -106 ˚C
    Boiling Point

    52 ˚C
    Flash point

    -48 ˚C
    decomposition point

    358°C 
    vapor pressure

    315 mmHg @20˚C
    Note

    Trisilylamine (SiH3)3N (TSA) is a highly volatile (315 torr @ 25°C) C-free and Cl-free precursor for Si3N4 and oxynitride with low T capabilities (575-700°C). It provides extremely clean process (no NH4Cl) with high step coverage capabilities and tunable Si/N ratio. Silicon nitride films exhibit very low H content.
  • TMAl (Trimethylaluminum) 三甲基鋁
    TMAl is used in semiconductor fabrication to deposit thin
    film, high-k dielectrics such as Al2O3 via the processes of
    chemical vapor deposition(CVD) or atomic layer
    deposition(ALD).
    ...

    • Property information

    CAS No 75-24-1
    Formula

    (CH3)3Al
    Name

    Trimethylaluminum
    purity

    6N (>99.99999%)
    Chemical Formula

    72.09
    Appearance

    Liquid
    Stability

    Catches fire spontaneously if exposed to air.
    Relative density

    0.752 g/mL at 20 °C
    Melting Point

    0-15 °C
    Boiling Point

    125-130 °C
    Flash point

    -18 °C
    decomposition point

    above 330°C 
    vapor pressure

    1.2 kPa (20 °C)
    Note

    Ultra Purity & Low O2; Oxygen: LOD 0.08ppm

    If you need this product, SDS or products manual, please phone sales department +886-3-6576140, Email: [email protected]
  • DIS (Diiodosilane) 二碘矽烷
    Diiodosilane (chemical formula: SiH₂I₂)
    Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD)....

    • DIS (Diiodosilane)  chemical formula: SiH₂I₂  is an iodine-containing silicon compound that serves as a silicon precursor in the semiconductor field.

    It is used in vapor deposition processes,

    particularly in certain "Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD)" techniques,

    and is gradually gaining attention.

    Gate-all-around (GAA) devices

    Formation of Poly-Si Channel in 3D NAND

    Selective silicon filling in FinFET structures

    Using low thermal budget materials for filling or repairing holes in BEOL layers

  • Borazine 環硼氮烷
    Borazine can also be used as a precursor to grow hexagonal boron nitride (h-BN) thin films and single layers on catalytic surfaces such as copper,

    ...

    • Application
    WBG (Wide Band Gap) materials; High thermal conductivity

    Borazines are also starting materials for other potential ceramics such as boron carbonitrides.

    Borazine can also be used as a precursor to grow hexagonal boron nitride (h-BN) thin films and single layers on catalytic surfaces such as copper,

    platinum, nickeliron and many more, with chemical vapor deposition (CVD).

    Borazine(B3H6N3) is an inorganic aromatic compound similar to benzene.

    The derivative of borazine examples is Boroncarbonitride, Trimethyl Borazine, etc.

    Let us learn more about examples of borazine.

Categories

300 Materials, Assembly
  • Thick Film Pastes; Materials
  • Thin Film; Dielectric Film Materials
    • 301 Materials, Chemicals & Solids
  • Cleaning Chemicals; Solvents; Strippers
  • Dopants; liquid or solid
  • Other Specialty Chemicals
  • Surface protection material; coatings
    • 302 Materials, FPD
  • Glass Plates for FPD
    • 303 Materials, Gases
  • Laser Gas Mixtures
  • Silicon Precursor Gas
    • 305 Materials, Nanotechnology
  • Materials, Nanotechnology
    • 306 PV Materials
  • Ingots, Wafers
    • 307 Materials, Process
  • Plasma; Ion Sources
    • 308 Materials, Substrate
  • Compound Semiconductor substrates (GaAs on Silicon; GaN; InP; SiGe, etc.)
  • Epitaxial; Epi; Gettered; Internal Gettered Wafers
  • Gallium Arsenide (GaAs); Sapphire Substrates
  • Silicon on Insulator (SOI); Silicon on Sapphire (SOS); Silicon Carbide;
  • solar cell substrates; crystalline silicon (c-Si); thin film
  • Thin & Thick film substrates for MEMS
    • 309 Materials, Test
  • Probe Cards; DUT boards and other probing accessories (incl Ceramic and Special Purpose Probe Cards)
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