Permanent Photo-Patternable Epoxies
            SU-8 3000 Series - Permanent Epoxy Negative Resists
  • Wide range of film thicknesses in a single coat: 0.5-200μm
  • Aspect ratio: >5:1
  • Reduced coating stress
  • Improved substrate adhesion
  • High thermal stability(<250°C)
  • High chemical stability(After hard bake)
  • Broad Application: MEMS,Opto-electronics,
    DRIE etch mask, Microfluidics, Displays etc.
    SU-8 TF 6000 Series - High Resolution Thin Resists
  • Photo imageable thin film (0.5 to 10μm) with high resolution patterning capability
  • Broadband sensitive (i, g and h-line)
  • Low temperature cure (<150°C), photo thermal or thermal only cure
  • Highly uniform thin coatings
  • Good adhesion to rigid and flexible substrates
    KMPR 1000 Series - Temporary/Permanent High Aspect Ratio Negative Resists
  KMPR is used as the DRIE etching mask with high aspect ratio pattern. It has also been widely used as a plating mold for MEMS and biological devices. Compared with SU-8, because KPMR reduces cross-link density, make it easier to strip before hard baked. KMPR can be developed in any PMGEA or TMAH developer.
    • High aspect ratio imaging(>5:1) with vertical sidewalls
  • 5-100μm in a single spin coat
  • Excellent metal adhesion
  • Excellent plating bath stability
    PermiNex - Permanent Wafer Bonding Adhesives
  Permanent Wafer Bonding Adhesives for Non-Hermetic Applications
  PermiNex 1000 - Solvent Base Develop
  PermiNex 2000 - Aqueous Base Develop
  PermiNex 1000 and 2000 series are Photo Imageable Wafer Bonding Adhesive, can be used to make the cavity structures. For example, the BAW / SAW / CIS packaging and microfluidic applications requiring precision alignment and low-temperature processes
  Material Attributes:
  • Permanent Wafer Bonding Adhesives for Non-Hermetic Applications
  • Negative Resists
  • Low-metal corrosion
  • Aspect ratio up to 3:1
  • Low process temperature(<200C)
  • High-quality, void free bonding
  • Superb adhesion to Silicon and Glass
  • Work well with subsequent processes (cutting, welding, etc.) and high reliability (HAST, TST)
    Permanent Photo-Patternable Epoxies
    KMSF 1000 Low Stress Photo-dielectric
  Material Attributes:
  • Negative-tone, photoimageable dielectric
  • Low temperature cure (≤175°C )
  • Low residual stress and ultra - low warpage
  • High elongation to failure and moderate tensile strength
  • Excellent resistance to standard chemicals
  • Low shrinkage on cure and good thermal stability
  • Good adhesion to Si, SiO2, SiN, Cu and Pl
  • Applications : Stress buffer, passivation, RDL
    KMSF 2000 Low Dk/Df Photo-dielectric
  Material Attributes:
  • Negative - tone, photoimageable dielectric
  • Low temperature cure (≤200°C)
  • 5-10 μm film thickness after cure
  • Good thermal and chemical stability
  • Can replace polymide film
  • Application : Wafer Level Package
    Temporary Lift-Off Resists
    PMGI & LOR Bi-Layer Lift-Off Resists
  Material Attributes:
  • Enables high resolution (<0.25μm) metallization lift-off
  • Enables thick metal deposition (>3μm)
  • Excellent adhesion to Si , GaAs , GaN substrates
  • Clean lift-off , even after very high temperature processing
  • Often used in the metal deposition process in III-V, microLED and other applications
    LOR C
  • Complete filling of hole / trenches of aspect ratio (> 1:5) without voids/ bubbles
  • The surface flattening effect can be achieved by high heat reflow
  • Excellent adhesion to Si, GaAs, GaN substrates
  • High thermal stability(<300°C)
  • Clean lift-off, even after very high temperature processing
    Single Layer Lift-Off Processes
    UniLOR N
  • Negative Photoresists for Single Layer Liff-off Processes
  • 1 to 5 μm film thickness in a single coat
  • Adjustable sidewall profile angle
  • Aqueous alkaline development (standard 0.26N TMAH developers)
  • Pattem thermal stability up to 200°C
  • Clean removal with standard photoresist removal chemistries
  • Suitable for metal evaporation physical vapor deposition
  • Good adhesion to various substrates
    Positive Resist for E-Beam Process
    PMMA & Copolymer (MMA (8.5) MAA)
  PMMA (Polymethacrylate) is a polymeric material well-suited for many imaging and non-imaging micro-electronic applications. PMMA is commonly used for direct write e-beam processes such as T-gate fabrication. PMMA is also used for temporary wafer bonding processes such as wafer thinning, where it's used as a protective layer and the temporary adhesive. PMMA resists are PMMA polymers of specific molecular weights that are dissolved in a solvent, such as anisole (a safer solvent) and then filtered. Exposure, direct write e-beam or X-ray typically, causes a chain scission of the polymer, resulting in a solubility differential between the exposed and unexposed regions of the resist film, leading to very high resolution patterning.
  • Well suited for direct write e-beam & X-ray
  • High resolution: <0.1μm
  • Wide range of molecular weights and viscosities available
  • Applications include e-beam writing, multi-layer T-gate lift-off, wafer thinning, etc.
  Copolymer resists are based on a mixture of MMA and 8.5% methacrylic acid. Copolymer (8.5) MAA is commonly used in combination with PMMA in bi-layer lift-off processes where independent CD control of the bi-layer resist stack is required. Standard copolymer resists are formulated in ethyl lactate and are available in a broad range of viscosities (film thicknesses).
    Temporary Plating Resists
    TempKoat™ N 15 - Thick, Negative-tone Temporary Resist
  • Thick Photoresist for electroplating
  • 7 to 20 μm film thickness in a single coat
  • Compatible with typical microbump and RDL plating chemistries
    TempKoat™ P 20 - Thick, Positive-tone Temporary Resist
  • Thick Photoresist for electroplating
  • 10 to 40 μm film thickness in a single coat
  • Compatible with typical microbump and RDL plating chemistries