Systems Engineering Inc.

SE50A-ECO 200DSMIF

・Compatible with 8-inch wafers
・Double SMIF
・Vacuum suction type robot transfer system
・OHT/AGV available
・Intuitive Graphical User Interface

【Applilcation】

・Epitaxial Thickness
   Thickness Range : 0.3-750 μm
   Precision : ±0.01 μm

・SiC Thickness
   Thickness Range : 0.3-750 μm
   Precision at 0.5-25 μm thickness sample: ≦ ±0.02

・Carbon & Oxygen in silicon
   Range(Cs) : 0.1-10 ppmA
   Range(Oi) : 0.3-35 ppmA
   Precision(Cs) : STD 0.05 ppmA
   Precision(Oi) : STD 0.08 ppmA

・Boron & Phosphrus in BPSG
   Range(B) : 1-10 Wt%
   Range(P) : 2-12 Wt%
   Range(B/P) : ±0.05 Wt%

・Hydrogen(Si-H/N-H) in Silicon Nitride
   Range : 3-30 Atom%
   Precision : ±0.3 Atom%

・Fluorine in SiO2 Films
   Range of thickness : 3000-10000Å
   Precision : STD<0.2 Fwt%

・Carbon doped Films
   Silicon Nitride
   Silicon Oxide

SE50A-ECO 200SS

・Compatible with 4-8 inches wafers
・Single cassette
・Vacuum suction type robot transfer system
・Intuitive Graphical User Interface
・Space saving model

【Applilcation】
・Epitaxial Thickness
   Thickness Range : 0.3-750 μm
   Precision : ±0.01 μm

・SiC Thickness
   Thickness Range : 0.3-750 μm
   Precision at 0.5-25 μm thickness sample: ≦ ±0.02

・Carbon & Oxygen in silicon
   Range(Cs) : 0.1-10 ppmA
   Range(Oi) : 0.3-35 ppmA
   Precision(Cs) : STD 0.05 ppmA
   Precision(Oi) : STD 0.08 ppmA

・Boron & Phosphrus in BPSG
   Range(B) : 1-10 Wt%
   Range(P) : 2-12 Wt%
   Range(B/P) : ±0.05 Wt%

・Hydrogen(Si-H/N-H) in Silicon Nitride
   Range : 3-30 Atom%
   Precision : ±0.3 Atom%

・Fluorine in SiO2 Films
   Range of thickness : 3000-10000Å
   Precision : STD<0.2 Fwt%

・Carbon doped Films
   Silicon Nitride
   Silicon Oxide

SE50A-ECO 300SF

・8-12 inches wafer measurement
・Single FOUP
・Vacuum suction type robot transfer system
・Compatible with OHT/AGV
・Intuitive software control
・Safety standard compliant model(SEMI-S2、CE marking)

【Applilcation】
・EPI Thickness measurement
Thickness Range: 0.3-750 μm
Precision: ±0.01 μm

・SiC Thickness
   Thickness Range : 0.3-750 μm
   Precision at 0.5-25 μm thickness sample: ≦ ±0.02

・Carbon & Oxygen in Silicon measurement
Range(Cs): 0.1-10 ppmA
Range(Oi): 0.3-35 ppmA
Precision(Cs): STD 0.05 ppmA
Precision(Oi): STD 0.08 ppmA

・Boron & Phosphorus in BPSG Films measurement
Range(B): 1-10 Wt%
Range(P): 2-12 Wt%
Precision(B/P): ±0.05 Wt%

・Hydrogen in Silicon Nitride Films measurement
Range: 3-30 Atom%
Precision: ±0.3 Atom%

・Fluorine in SiO2 Films measurement
Thickness: 3000-10000Å
Precision: STD<0.2 Fwt%

・Carbon-doped Films evaluation
Silicon Nitride
Silicon Oxide

SE50-OIP

・Compatible with φ200mm/300mm ingot
・Ingot length up to 3000mm
・Automatic multipoint measurement
・Intuitive Graphical User Interface

【Application】
・Oxygen in ingot
   Range : 0.3-35 ppmA
   Precision : STD 0.08 ppmA

SE50S-ECO

・Compatible with 2-8 inches or 6-12 inches wafers
・Stage Type
・Automatic multipoint measurement system in wafers
・Intuitive Graphical User Interface

【Applilcation】
・Epitaxial Thickness
   Thickness Range : 0.3-750 μm
   Precision : ±0.01 μm

・SiC Thickness
   Thickness Range : 0.3-750 μm
   Precision at 0.5-25 μm thickness sample: ≦ ±0.02

・Carbon & Oxygen in silicon
   Range(Cs) : 0.1-10 ppmA
   Range(Oi) : 0.3-35 ppmA
   Precision(Cs) : STD 0.05 ppmA
   Precision(Oi) : STD 0.08 ppmA

・Boron & Phosphrus in BPSG
   Range(B) : 1-10 Wt%
   Range(P) : 2-12 Wt%
   Range(B/P) : ±0.05 Wt%

・Hydrogen(Si-H/N-H) in Silicon Nitride
   Range : 3-30 Atom%
   Precision : ±0.3 Atom%

・Fluorine in SiO2 Films
   Range of thickness : 3000-10000Å
   Precision : STD<0.2 Fwt%

・Carbon doped Films
   Silicon Nitride
   Silicon Oxide