合晶科技股份有限公司

• Diameter (mm): 150 / 200 / 300
• Dopant: B / P / As / Sb
• Orientation: 100 / 111
• Resistivity (ohm-cm):
  • 　B (0.0005 ~ 1000)
  • 　P (0.0008 ~ 0.0015, 1 ~ 100)
  • 　As (0.0015 ~ 0.007)
  • 　Sb (0.007 ~ 0.02)
• *SSP or DSP

• Diameter (mm): 150 / 200 / 300
• Epi Dopant: B / P
• Orientation: 100 / 111
• Structure Design: Single or multiple layers
• Epi Resistivity (ohm-cm): 0.02 ~ 1000
• Epi Thickness (μm): 1 ~ 150
• Substrate: Polished, SOI wafer or others   

*Turnkey solution or buried layer Epi service

• Diameter (mm): 150 / 200
• Dopant: B / P / As / Sb
• Orientation: 100 / 111
• Device Layer Thickness (μm): ≥0.2
• Device Layer Tolerance (μm): ±0.5 ~ ±0.05
• Structure Design: Single or multiple device layers / with or without terrace
• Buried Oxide (μm): 0.1~ 4

• Diameter (mm): 150 / 200
• Total Epi Thickness (μm): 2 ~ 7
• Epi Thickness Uniformity: ≤5%
• FWHM (002): ≤700 arcsec
• FWHM (102): ≤1200 arcsec
• Warp (μm): ≤70
• Concentration (cm-2): ≥9E+12
• Mobility (cm2/V-s): ≥1600

*Turnkey solution available