The SPEA DOT800T Power Semiconductor Tester is designed for high-performance testing of next-generation power devices, including traditional Silicon, Silicon Carbide (SiC), and Gallium Nitride (GaN) technologies. It integrates high-voltage isolation, static DC characterization, and high-speed dynamic AC testing within a single production-ready platform, addressing the demanding voltage, current, frequency, and reliability requirements of applications such as electric vehicles, renewable energy, industrial drives, and power conversion systems.
DOT800T is based on a multi-core architecture and can be configured with one to six independent test cores. Each core has its own controller and can be assigned to ISO, AC, or DC testing according to specific test requirements and production flows. Tests can run in true parallel and asynchronous mode, with each core independently managing instruments, connections, and program execution. The system is scalable and field-upgradeable, allowing manufacturers to adapt its configuration as device requirements evolve.
The platform integrates specialized instrumentation for wide-bandgap semiconductor testing, supporting high voltages, high currents, high power, and high switching frequencies. High voltage and current can be supplied simultaneously, while sensitive current measurement and high-frequency digitizers provide accurate leakage and breakdown measurements. Local setup memory, embedded ramps and trigger macros, and system-wide hardware synchronization help reduce test time while maintaining reliable mixed-mode operation. Built-in alarms monitor conditions such as over-temperature, over-current, floating connections, and Kelvin contact issues.
For dynamic AC testing, DOT800T supports voltages from 2 kV to 4 kV, pulse currents up to 3 kA, and short-circuit testing up to 10 kA. Up to eight independently programmable gate-drive circuits and 2-to-8 multi-pulse sequences enable detailed evaluation of switching behavior, thermal decay, and gate characteristics. Integrated digitizers provide sampling rates up to 10 GS/s for accurate capture of high-speed voltage and current waveforms.
The system is engineered with ultra-low stray inductance throughout the active signal path, minimizing parasitic effects and voltage overshoot during fast switching. This is particularly important for safely testing high-speed SiC and GaN devices.
DOT800T also simplifies system maintenance and upgrades through configurable hardware architecture. Its software environment supports code-free test development, pre-validated test routines, waveform visualization, and real-time modification of test parameters without recompiling the complete program.
Combining high-power instrumentation, parallel multi-core testing, advanced dynamic measurement, safety monitoring, and flexible software, the SPEA DOT800T provides a scalable and reliable solution for high-volume power semiconductor testing from development through mass production.