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超赫科技股份有限公司

  • Booth: I3307

Overview

Ultraband Technologies is a III-V compound semiconductor fabless IC design house based in Taiwan.  We are focused on designing 5G wireless Monolithic Microwave Integrated Circuits (MMIC), RF Frontend Modules, Low Earth Orbit (LEO) ICs, and III-V Power Devices.  We also are dedicated to optimizing Epitaxial Structures and Device Layouts.

For 5G MMIC, we focus on high-frequency mmWave GaN ICs, including the Ku & Ka band – Switches, LNA (Low Noise Amplifiers), and PA (Power Amplifiers).  We are committed to developing high-frequency Antenna RF front-end modules for 5G mmWave small cell, including AiP, Beam-forming IC array, Up/Down converters, and control IC modules.

Regarding advanced compound semiconductor Power Devices, we place emphasis on developing high breakdown voltage D-mode GaN power and E-mode GaN power devices.  All of these are used in AC/DC, DC/DC Inverters & Converters for use in Charging Stations, Onboard Chargers, high wattage Quick Chargers, and Computing Server Power Supplies.


  Press Releases

  • Ultraband-NTT-AT RF/power semi MOU. L: Y.Sakai (NTT-AT GM); R: Wu (Ultraband CEO). Credit: Ultraband

    Ultraband Technologies, an emerging IC design startup, announced today the official signing of a Memorandum of Understanding (MOU) with NTT ADVANCED  TECHNOLOGY CORPORATION (NTT-AT), a subsidiary of Japan's NTT Group. Focusing on III-V compound semiconductor technologies, the two companies plan to establish a supply chain partnership spanning upstream epitaxial development, midstream product design and development, and downstream market expansion.

    Initial Focus on Power Semiconductors with Parallel RF Development

    This strategic collaboration is intended to leverage the complementary technological strengths of Ultraband Technologies and NTT-AT in addressing global market opportunities in electric vehicles (EVs), automotive electronics, green energy, AI servers, and high-frequency communications, including 5G-Advanced, 6G, and satellite communications.

    To support concrete business execution, both parties have established a structured communication mechanism and will progressively align their technology and product roadmaps across two primary domains:

    1.In the field of power semiconductors, which represents the initial focus of the collaboration, NTT-AT's epitaxial material technologies in III-V compound semiconductors, including GaN, will be integrated with Ultraband's expertise in power device and chip design. The objective is to develop high-performance and reliable power management solutions for applications in new energy, AI, and industrial markets.

    2.In parallel, collaboration in RF semiconductors will be advanced concurrently. By combining Ultraband's design capabilities in RF ICs and Antenna-in-Module (AiM) technology with NTT-AT's III-V compound semiconductor crystal growth expertise, the two companies plan to co-develop RF components for applications such as 5G-Advanced, 6G, satellite communications, drones, and robotics.

    Strengthening Supply Chain Integration Through Epitaxial Structure Design

    This partnership is intended to extend beyond individual projects, with both companies working toward a long-term collaboration framework covering the full product lifecycle. Within this framework, Ultraband will leverage its capabilities in epitaxial structure design as a key technical interface to facilitate integration between the two organizations.

    Semiconductor chip performance has traditionally been constrained by material specifications and epitaxial growth limitations. Ultraband applies its proprietary research in device material physics and epitaxial structure design to enable precise optimization at the material level, with the aim of overcoming technical bottlenecks and enhancing overall chip performance.

    By integrating Ultraband's epitaxial structure design capabilities with NTT-AT's epitaxial growth expertise, the collaboration is expected to improve performance from the material foundation while ensuring alignment with subsequent product design and development stages. Looking ahead, both parties intend to leverage their respective market channels to introduce these solutions into the global supply chain, targeting mutually beneficial outcomes.

    Seizing Market Opportunities in High-Computing AI, Green Energy, and Advanced Communications

    Amid the continued growth of AI data centers, digital transformation, and global net-zero initiatives, high-performance III-V compound semiconductors for power and RF applications are becoming increasingly critical. The stringent requirements of AI servers for power efficiency and thermal management, the efficiency demands of energy storage systems, and the high-frequency performance standards of next-generation communication technologies all underscore the importance of advanced semiconductor solutions.

    Ultraband Technologies aims to contribute to the development of next-generation AI computing, green energy systems, and advanced communication ecosystems through its technological capabilities.

    Going forward, Ultraband Technologies and NTT-AT will utilize their joint working group to further align epitaxial specifications and product roadmaps, with the goal of delivering reliable technologies and solutions to global customers.


  Products

  • Phased Array Antenna System
    Creating a customized Multiband & MultiOrbit Phased Array Antenna System....

  • Azhdarchidae antenna (ESA) system: This ESA serves as a front-end antenna system that connects directly to a Satcom modem, enabling a complete Ground User Terminal with integrated beamforming, tracking, and high-performance satellite connectivity for LEO and GEO applications worldwide.

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