We have the technology to grow crystals on silicon (Si), sapphire (Al2O3), silicon carbide (SiC), and gallium nitride (GaN) substrates, and can handle all substrates used for nitride systems. Development studies using multiple substrate types can be carried out in parallel. We do not waste your valuable time.
We accept orders from small-scale prototypes to mass production.
It is also compatible with large-diameter 8-inch silicon substrates. In addition, device fabrication and material analysis are also possible through collaboration with our related departments.