New cache memory technology, increasing capacity by over 4x compared to SRAM based cache, while offering similar operation speeds and latency.
Based on MRAM, and incorporating topological antiferromagnets, TL-RAM realizes L3 cache GPU cache compatible speeds with extremely small cell size.
TL-RAM incorporates a 2 transistor SOT-MRAM design which is structured to be compatible with conventional MRAM manufacturing equipment and production lines with embedded MRAM capability.
TL-RAM utilizes Mn3Sn a non-collinear antiferromagnet, which is directly incorporated into the memory cell. Mn3Sn is known for extremely high spin switching, and in addition to the antiferromagnetic properties, improves write current requirements.