Silicon Epitaxial wafers
Dia : 4"~ 8"
Dopant : N/N+, P/P+. N/P+, P/N+, N/N/N+, N/P/N+
Thickness : 0.1~150um, multiple layers are available
Resistivity : 0.003~1200 ohmcm
Silicon CZ/MCZ/FZ/NTD substrate
Dia : 4"~ 12"
Dopant : Arsenic, (Red) Phosphorus, Antimony, Boron.
Orientation : <111>,<100>, <110>
Resistivity : 0.001~20,000 ohm-cm
Surface : As cut, lapped, etched and polished.