Photoresists (For Lift-Off, MEMS, E-beam Lithography, Compound Semiconductor, Wafer Bonding and Wafer Level Packaging)
Permanent Photo-Patternable Epoxies
SU-8 3000 Series - Permanent Epoxy Negative Resists
• Wide range of film thicknesses in a single coat: 0.5-200μm
• Aspect ratio: >5:1
• Reduced coating stress
• Improved substrate adhesion
• High thermal stability(<250°C)
• High chemical stability(After hard bake)
• Broad Application: MEMS,Opto-electronics,
DRIE etch mask, Microfluidics, Displays etc.
SU-8 TF 6000 Series - High Resolution Thin Resists
• Photo imageable thin film (0.5 to 10μm) with high resolution patterning capability
• Broadband sensitive (i, g and h-line)
• Low temperature cure (<150°C), photo thermal or thermal only cure
• Highly uniform thin coatings
• Good adhesion to rigid and flexible substrates
KMPR 1000 Series - Temporary/Permanent High Aspect Ratio Negative Resists
KMPR is used as the DRIE etching mask with high aspect ratio pattern. It has also been widely used as a plating mold for MEMS and biological devices. Compared with SU-8, because KPMR reduces cross-link density, make it easier to strip before hard baked. KMPR can be developed in any PMGEA or TMAH developer.
• High aspect ratio imaging(>5:1) with vertical sidewalls
• 5-100μm in a single spin coat
• Excellent metal adhesion
• Excellent plating bath stability
PermiNex - Permanent Wafer Bonding Adhesives
Permanent Wafer Bonding Adhesives for Non-Hermetic Applications
PermiNex 1000 - Solvent Base Develop
PermiNex 2000 - Aqueous Base Develop
PermiNex 1000 and 2000 series are Photo Imageable Wafer Bonding Adhesive, can be used to make the cavity structures. For example, the BAW / SAW / CIS packaging and microfluidic applications requiring precision alignment and low-temperature processes
Material Attributes:
• Permanent Wafer Bonding Adhesives for Non-Hermetic Applications
• Negative Resists
• Low-metal corrosion
• Aspect ratio up to 3:1
• Low process temperature(<200C)
• High-quality, void free bonding
• Superb adhesion to Silicon and Glass
• Work well with subsequent processes (cutting, welding, etc.) and high reliability (HAST, TST)
Permanent Photo-Patternable Epoxies
KMSF 1000 Low Stress Photo-dielectric
Material Attributes:
• Negative-tone, photoimageable dielectric
• Low temperature cure (≤175°C )
• Low residual stress and ultra - low warpage
• High elongation to failure and moderate tensile strength
• Excellent resistance to standard chemicals
• Low shrinkage on cure and good thermal stability
• Good adhesion to Si, SiO2, SiN, Cu and Pl
• Applications : Stress buffer, passivation, RDL
KMSF 2000 Low Dk/Df Photo-dielectric
Material Attributes:
• Negative - tone, photoimageable dielectric
• Low temperature cure (≤200°C)
• 5-10 μm film thickness after cure
• Good thermal and chemical stability
• Can replace polymide film
• Application : Wafer Level Package
Temporary Lift-Off Resists
PMGI & LOR Bi-Layer Lift-Off Resists
Material Attributes:
• Enables high resolution (<0.25μm) metallization lift-off
• Enables thick metal deposition (>3μm)
• Excellent adhesion to Si , GaAs , GaN substrates
• Clean lift-off , even after very high temperature processing
• Often used in the metal deposition process in III-V, microLED and other applications
LOR C
• Complete filling of hole / trenches of aspect ratio (> 1:5) without voids/ bubbles
• The surface flattening effect can be achieved by high heat reflow
• Excellent adhesion to Si, GaAs, GaN substrates
• High thermal stability(<300°C)
• Clean lift-off, even after very high temperature processing
Single Layer Lift-Off Processes
UniLOR N
• Negative Photoresists for Single Layer Liff-off Processes
• 1 to 5 μm film thickness in a single coat
• Adjustable sidewall profile angle
• Aqueous alkaline development (standard 0.26N TMAH developers)
• Pattem thermal stability up to 200°C
• Clean removal with standard photoresist removal chemistries
• Suitable for metal evaporation physical vapor deposition
• Good adhesion to various substrates
Positive Resist for E-Beam Process
PMMA & Copolymer (MMA (8.5) MAA)
PMMA (Polymethacrylate) is a polymeric material well-suited for many imaging and non-imaging micro-electronic applications. PMMA is commonly used for direct write e-beam processes such as T-gate fabrication. PMMA is also used for temporary wafer bonding processes such as wafer thinning, where it's used as a protective layer and the temporary adhesive. PMMA resists are PMMA polymers of specific molecular weights that are dissolved in a solvent, such as anisole (a safer solvent) and then filtered. Exposure, direct write e-beam or X-ray typically, causes a chain scission of the polymer, resulting in a solubility differential between the exposed and unexposed regions of the resist film, leading to very high resolution patterning.
• Well suited for direct write e-beam & X-ray
• High resolution: <0.1μm
• Wide range of molecular weights and viscosities available
• Applications include e-beam writing, multi-layer T-gate lift-off, wafer thinning, etc.
Copolymer resists are based on a mixture of MMA and 8.5% methacrylic acid. Copolymer (8.5) MAA is commonly used in combination with PMMA in bi-layer lift-off processes where independent CD control of the bi-layer resist stack is required. Standard copolymer resists are formulated in ethyl lactate and are available in a broad range of viscosities (film thicknesses).
Temporary Plating Resists
TempKoat™ N 15 - Thick, Negative-tone Temporary Resist
• Thick Photoresist for electroplating
• 7 to 20 μm film thickness in a single coat
• Compatible with typical microbump and RDL plating chemistries
TempKoat™ P 20 - Thick, Positive-tone Temporary Resist
• Thick Photoresist for electroplating
• 10 to 40 μm film thickness in a single coat
• Compatible with typical microbump and RDL plating chemistries