1. It is used for detecting PL ( photoluminescence ) spectroscopy and white light reflectance spectroscopy of wafer.
2. It is used for measuring wafer point-to-point: peak wavelength (WLD ), main wavelength (WLP ), spectral half width (HW), integral intensity (LOP ) and peak intensity (PI ) through PL spectrum.
3. It is used for measuring wafer point-to-point: film thickness (Thickness) and reflectance (PR) through white reflection spectrum
4. It can display and output means of various measurement parameters, STD and other statistical results, and display Mapping distribution of various parameters in graphical form.
5. Other optional features:
5.1 It can be equipped with as many as four lasers.5.2 It can be equipped for measuring DBR (distributed Bragg reflector) data of various wavelengths (UV - NIR).
5.3 It can be equipped with function of measuring wafer warpage.